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以液相沉積法成長氧化鋅提升光電半導體元件之效率 = Enhancemen...

Po-Hsun Lei

以液相沉積法成長氧化鋅提升光電半導體元件之效率 = Enhancement of Efficiency of Optoelectronic Semiconductor Devices Using Textured Zinc Oxide prepared by Liquid Phase Deposition Method

Record Type:	Language materials, printed : monographic
Paralel Title:	Enhancement of Efficiency of Optoelectronic Semiconductor Devices Using Textured Zinc Oxide prepared by Liquid Phase Deposition Method
Author:	李元智,
Secondary Intellectual Responsibility:	雷伯薰,
Place of Publication:	雲林縣
Published:	國立虎尾科技大學;
Year of Publication:	民100[2011]
Edition:	初版
Description:	76面圖 : 30公分;
Subject:	氮化銦鎵/氮化鎵發光二極體
Subject:	三五族太陽能電池
Subject:	InGaN/GaN light emitting diodes
Subject:	Zinc oxide (ZnO)
Subject:	textured window layer
Subject:	liquid phase deposition (LPD) method
Subject:	III-V solar cell
Online resource:	http://cetd.lib.nfu.edu.tw/etdservice/view_metadata?etdun=U0028-1907201119305400

以液相沉積法成長氧化鋅提升光電半導體元件之效率 = Enhancement of Efficiency of Optoelectronic Semiconductor Devices Using Textured Zinc Oxide prepared by Liquid Phase Deposition Method
李, 元智

以液相沉積法成長氧化鋅提升光電半導體元件之效率 = Enhancement of Efficiency of Optoelectronic Semiconductor Devices Using Textured Zinc Oxide prepared by Liquid Phase Deposition Method / 李元智撰 - 初版. - 雲林縣 : 國立虎尾科技大學, 民100[2011]. - 76面 ; 圖 ; 30公分.
含參考書目.
氮化銦鎵/氮化鎵發光二極體三五族太陽能電池InGaN/GaN light emitting diodesZinc oxide (ZnO)textured window layerliquid phase deposition (LPD) methodIII-V solar cell

雷, 伯薰

以液相沉積法成長氧化鋅提升光電半導體元件之效率 = Enhancement of Efficiency of Optoelectronic Semiconductor Devices Using Textured Zinc Oxide prepared by Liquid Phase Deposition Method
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