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Development of Low-Temperature Atomic Layer Deposition of Ultra-Thin RuCo Direct Plate Liners for Flexible Electronics Applications.

紀錄類型:	書目-語言資料,手稿 : Monograph/item
正題名/作者:	Development of Low-Temperature Atomic Layer Deposition of Ultra-Thin RuCo Direct Plate Liners for Flexible Electronics Applications./
作者:	Gregory, Dillon A.
面頁冊數:	1 online resource (44 pages)
附註:	Source: Masters Abstracts International, Volume: 78-04.
Contained By:	Masters Abstracts International78-04.
標題:	Nanoscience. -
電子資源:	click for full text (PQDT)
ISBN:	9781339999036

Development of Low-Temperature Atomic Layer Deposition of Ultra-Thin RuCo Direct Plate Liners for Flexible Electronics Applications.
Gregory, Dillon A.

Development of Low-Temperature Atomic Layer Deposition of Ultra-Thin RuCo Direct Plate Liners for Flexible Electronics Applications. - 1 online resource (44 pages)

Source: Masters Abstracts International, Volume: 78-04.

Thesis (M.S.)--State University of New York at Albany, 2016.

Includes bibliographical references

Low temperature plasma-assisted atomic layer deposition-grown metal nanocomposite layers based on mixtures of ruthenium and cobalt have been investigated as potential copper adhesion/barrier layers in flexible electronics applications. The success of adapting this process to flexible electronics depends on the candidate barriers meeting several necessary properties including sufficient electrical conductivity, compatibility with Cu electroplating, and ability to prevent Cu diffusion into the substrate. Preliminary testing has shown that atomic layer deposition (ALD) can be used as a technique for depositing alloyed metallic barrier layers at the lower thermal constraints dictated by the use of polymer substrates and still produce continuous and electrically conductive metallic thin films. This has been achieved by lowering ALD processing temperatures to below the glass transition temperatures of polymeric substrate materials used in flexible electronics, including polyimide (PI), polyethylene terephthalate (PET), and polyethylene naphthalate (PEN) in order to maintain their structural integrity. These liner films, processed at temperatures as low as 100°C, are observed to support direct (i.e. seedless) electrochemical deposition of copper, though they failed to effectively act as barriers preventing copper diffusion into the dielectric substrate material. Possible reasons for this behavior and additional studies to address it are also discussed.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9781339999036Subjects--Topical Terms:

632473
Nanoscience.
Subjects--Index Terms:

Atomic layer depositionIndex Terms--Genre/Form:

554714
Electronic books.

Development of Low-Temperature Atomic Layer Deposition of Ultra-Thin RuCo Direct Plate Liners for Flexible Electronics Applications.
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504 $a Includes bibliographical references
520 $a Low temperature plasma-assisted atomic layer deposition-grown metal nanocomposite layers based on mixtures of ruthenium and cobalt have been investigated as potential copper adhesion/barrier layers in flexible electronics applications. The success of adapting this process to flexible electronics depends on the candidate barriers meeting several necessary properties including sufficient electrical conductivity, compatibility with Cu electroplating, and ability to prevent Cu diffusion into the substrate. Preliminary testing has shown that atomic layer deposition (ALD) can be used as a technique for depositing alloyed metallic barrier layers at the lower thermal constraints dictated by the use of polymer substrates and still produce continuous and electrically conductive metallic thin films. This has been achieved by lowering ALD processing temperatures to below the glass transition temperatures of polymeric substrate materials used in flexible electronics, including polyimide (PI), polyethylene terephthalate (PET), and polyethylene naphthalate (PEN) in order to maintain their structural integrity. These liner films, processed at temperatures as low as 100°C, are observed to support direct (i.e. seedless) electrochemical deposition of copper, though they failed to effectively act as barriers preventing copper diffusion into the dielectric substrate material. Possible reasons for this behavior and additional studies to address it are also discussed.
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