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Processing Options for Engineered Ferroelectric Hafnia-Zirconia/Titanium Nitride Interfaces.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	Processing Options for Engineered Ferroelectric Hafnia-Zirconia/Titanium Nitride Interfaces./
Author:	Hsain, Hanan Alexandra.
Description:	1 online resource (259 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 84-04, Section: B.
Contained By:	Dissertations Abstracts International84-04B.
Subject:	Crystal structure. -
Online resource:	click for full text (PQDT)
ISBN:	9798352650516

Processing Options for Engineered Ferroelectric Hafnia-Zirconia/Titanium Nitride Interfaces.
Hsain, Hanan Alexandra.

Processing Options for Engineered Ferroelectric Hafnia-Zirconia/Titanium Nitride Interfaces. - 1 online resource (259 pages)

Source: Dissertations Abstracts International, Volume: 84-04, Section: B.

Thesis (Ph.D.)--North Carolina State University, 2022.

Includes bibliographical references

Polymorphic HfxZr1-xO2 (HZO) thin films exhibit a wide range of functional properties, e.g., dielectric, ferroelectric, and anti-ferroelectric properties. Compatibility with complementary metal-oxide semiconductor (CMOS) technology, in combination with its demonstrated ferroelectricity at the nanometer scale (~ 10 nm), make HZO thin films an attractive candidate for electronic memory applications. An understanding of the processing-structure-properties of HZO and its interfaces is critical in realizing applications such as efficient non-volatile memory storage in devices such as ferroelectric random access memory (FeRAM) and ferroelectric fieldeffect transistors (FeFET). While the tetragonal phase (P42/nmc) is typically stabilized in HZO thin films < 30 nm, processing choices such as the use of a capping layer or quench cooling after annealing has been found to induce shearing of the tetragonal lattice and result in the polar orthorhombic phase (Pca21). Since ferroelectricity in HZO thin films has been ascribed to the stabilization of this noncentrosymetric orthorhombic phase (o-phase), many studies have sought to maximize the o-phase fraction in polycrystalline thin films to yield the highest possible remanent polarization.The use of TiN electrodes within the metal-ferroelectric-metal (MFM) structures accomplish three primary goals: (1) enables electrical contact with the oxide for characterization purposes, (2) mechanically confines the HZO during annealing process whereby the oxide undergoes tensile during rapid cooling, and (3) acts as an oxygen sink which creates a slightly oxygen deficient HZO layer. Given that both tensile strain and oxygen vacancies are thought to be key enablers for stabilizing the ferroelectric phase, a deeper understanding of the TiN/HZO interface would enrich our understanding on the origins of ferroelectricity in HZO as well as developing process strategies for HZO-based devices with robust electrical properties. Despite the high remanent polarization and integrability of HZO into CMOS-based devices, major challenges remain. The so called "wake-up" effect in which the remanent polarization varies as a function of cycling number along with premature dielectric breakdown of devices limit the applicability of HZO films into commercial devices which often requires >1010 read/write cycles for industry applications. Given that the wake-up effect and fatigue has been directly linked to defects such as oxygen vacancies and interstitials, the careful design of TiN/HZO interfaces is crucial in balancing a high remanent polarization with device longevity. In this dissertation, an in situ high temperature X-ray diffraction study is first carried out across HfO2-ZrO2 compositions to optimize the annealing temperature and stoichiometry of studied HZO films. Three processing strategies are then presented for engineering the TiN/HZO interface, namely (1) maintaining vacuum during sequential atomic layer deposition of the entire capacitor stack, (2) O2-plasma ALD processing of the HZO film, and (3) the insertion of 1-nm Al2O3 as top and bottom interlayers in TiN/HZO/TiN structures. The aim of this dissertation is thus to generate crucial processing-structure-property understanding of HZO/TiN interfaces for future integration into ferroelectric memory and related devices.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9798352650516Subjects--Topical Terms:

1372699
Crystal structure.
Index Terms--Genre/Form:

554714
Electronic books.

Processing Options for Engineered Ferroelectric Hafnia-Zirconia/Titanium Nitride Interfaces.
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520 $a Polymorphic HfxZr1-xO2 (HZO) thin films exhibit a wide range of functional properties, e.g., dielectric, ferroelectric, and anti-ferroelectric properties. Compatibility with complementary metal-oxide semiconductor (CMOS) technology, in combination with its demonstrated ferroelectricity at the nanometer scale (~ 10 nm), make HZO thin films an attractive candidate for electronic memory applications. An understanding of the processing-structure-properties of HZO and its interfaces is critical in realizing applications such as efficient non-volatile memory storage in devices such as ferroelectric random access memory (FeRAM) and ferroelectric fieldeffect transistors (FeFET). While the tetragonal phase (P42/nmc) is typically stabilized in HZO thin films < 30 nm, processing choices such as the use of a capping layer or quench cooling after annealing has been found to induce shearing of the tetragonal lattice and result in the polar orthorhombic phase (Pca21). Since ferroelectricity in HZO thin films has been ascribed to the stabilization of this noncentrosymetric orthorhombic phase (o-phase), many studies have sought to maximize the o-phase fraction in polycrystalline thin films to yield the highest possible remanent polarization.The use of TiN electrodes within the metal-ferroelectric-metal (MFM) structures accomplish three primary goals: (1) enables electrical contact with the oxide for characterization purposes, (2) mechanically confines the HZO during annealing process whereby the oxide undergoes tensile during rapid cooling, and (3) acts as an oxygen sink which creates a slightly oxygen deficient HZO layer. Given that both tensile strain and oxygen vacancies are thought to be key enablers for stabilizing the ferroelectric phase, a deeper understanding of the TiN/HZO interface would enrich our understanding on the origins of ferroelectricity in HZO as well as developing process strategies for HZO-based devices with robust electrical properties. Despite the high remanent polarization and integrability of HZO into CMOS-based devices, major challenges remain. The so called "wake-up" effect in which the remanent polarization varies as a function of cycling number along with premature dielectric breakdown of devices limit the applicability of HZO films into commercial devices which often requires >1010 read/write cycles for industry applications. Given that the wake-up effect and fatigue has been directly linked to defects such as oxygen vacancies and interstitials, the careful design of TiN/HZO interfaces is crucial in balancing a high remanent polarization with device longevity. In this dissertation, an in situ high temperature X-ray diffraction study is first carried out across HfO2-ZrO2 compositions to optimize the annealing temperature and stoichiometry of studied HZO films. Three processing strategies are then presented for engineering the TiN/HZO interface, namely (1) maintaining vacuum during sequential atomic layer deposition of the entire capacitor stack, (2) O2-plasma ALD processing of the HZO film, and (3) the insertion of 1-nm Al2O3 as top and bottom interlayers in TiN/HZO/TiN structures. The aim of this dissertation is thus to generate crucial processing-structure-property understanding of HZO/TiN interfaces for future integration into ferroelectric memory and related devices.
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