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氧化銦鈰應用於網印式單晶矽太陽能電池光電特性研究 = = Effects...

邱弘偉

氧化銦鈰應用於網印式單晶矽太陽能電池光電特性研究 = = Effects of Indium Cerium Oxide on Photovoltaic Characteristics of Screen-Printed Monocrystalline Silicon Solar Cells /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	氧化銦鈰應用於網印式單晶矽太陽能電池光電特性研究 =/ 邱弘偉.
Reminder of title:	Effects of Indium Cerium Oxide on Photovoltaic Characteristics of Screen-Printed Monocrystalline Silicon Solar Cells /
remainder title:	Effects of Indium Cerium Oxide on Photovoltaic Characteristics of Screen-Printed Monocrystalline Silicon Solar Cells.
Author:	邱弘偉
Published:	雲林縣 :國立虎尾科技大學 , : 民113.06.,
Description:	[12], 80面 :圖, 表 ; : 30公分.;
Notes:	指導教授: 鄭錦隆.
Subject:	sputtering pressure. -
Online resource:	電子資源

氧化銦鈰應用於網印式單晶矽太陽能電池光電特性研究 = = Effects of Indium Cerium Oxide on Photovoltaic Characteristics of Screen-Printed Monocrystalline Silicon Solar Cells /
邱弘偉

氧化銦鈰應用於網印式單晶矽太陽能電池光電特性研究 =Effects of Indium Cerium Oxide on Photovoltaic Characteristics of Screen-Printed Monocrystalline Silicon Solar Cells /Effects of Indium Cerium Oxide on Photovoltaic Characteristics of Screen-Printed Monocrystalline Silicon Solar Cells.邱弘偉. - 初版. - 雲林縣 :國立虎尾科技大學 ,民113.06. - [12], 80面 :圖, 表 ;30公分.

指導教授: 鄭錦隆.

碩士論文--國立虎尾科技大學光電工程系光電與材料科技碩士班.

含參考書目.

本研究論文探討氧化銦鈰應用於網印式單晶矽太陽能電池光電特性之影響，因氧化銦鈰(ICO)具有高移動率、低載子濃度、在近紅外光的區域有優秀的穿透率、可作為太陽能電池的透明導電層、串接電池之間的連接層，與氧化銦錫(ITO)相比有更好的短路電流與光電轉換效率，因此本論文研究氧化銦鈰沉積在玻璃基板與網印式單晶矽太陽能電池的正面，實驗參數包含低濺鍍功率下，摻氫含量對氧化銦鈰的影響、改變濺鍍功率從45 變化至145 W、高濺鍍功率下，氬氣流量對氧化銦鈰的影響、高濺鍍功率下，濺鍍壓力對氧化銦鈰的影響、預鍍後，用空氣與純氧對氧化銦鈰作後處理，同時，透過霍爾效應分析儀、紫外光/可見光/近紅外光光譜儀、熱電子型場發射掃描式電子顯微鏡以及X射線繞射儀，獲取移動率、載子濃度、穿透率、厚度、表面形貌、晶格方向以及晶粒大小等結果，最後應用至網印式單晶矽太陽能電池上面，探討對光電轉換效率的衰減率。實驗結果顯示，在55 W的低功率下，且ICO薄膜內氫含量從0 %至5 %時，ICO薄膜沈積在玻璃基板上的電阻率仍高達102 Ω-cm，當靶材的功率增加，其電阻率下降，當靶材超過135W時，靶材表面有放電現象會影響實驗結果，為保護靶材，濺鍍功率的極限值為135 W，可獲得電阻率為8.7 × 10-2 Ω-cm。在高功率下，當氬氣流量增加，其電阻率下降至1.73 × 10-3 Ω-cm，在高功率下，當濺鍍壓力為5 mTorr，可獲得電阻率為1.49 × 10-3 Ω-cm，在高功率下，預鍍後，用空氣與純氧對ICO作後處理，實驗結果顯示，用空氣與純氧對ICO作後處理，可獲得相近的電阻率為1.49 × 10-3 Ω-cm與1.55 × 10-3 Ω-cm，且將ICO沈積於網印式單晶矽太陽能電池上面，其光電轉換效率分別衰減5.24 %與5.09 %，可知微量的純氧對ICO的影響甚微。.

(平裝)Subjects--Topical Terms:

1449962
sputtering pressure.

氧化銦鈰應用於網印式單晶矽太陽能電池光電特性研究 = = Effects of Indium Cerium Oxide on Photovoltaic Characteristics of Screen-Printed Monocrystalline Silicon Solar Cells /
LDR:05739cam a2200241 i 4500 001 1129693
008 241015s2024 ch ak erm 000 0 chi d
035 $a (THES)112NYPI0124012
040 $a NFU $b chi $c NFU $e CCR
041 0 # $a chi $b chi $b eng
084 $a 008.166M $b 7712:3 113 $2 ncsclt
100 1 $a 邱弘偉 $3 1448756
245 1 0 $a 氧化銦鈰應用於網印式單晶矽太陽能電池光電特性研究 = $b Effects of Indium Cerium Oxide on Photovoltaic Characteristics of Screen-Printed Monocrystalline Silicon Solar Cells / $c 邱弘偉.
246 1 1 $a Effects of Indium Cerium Oxide on Photovoltaic Characteristics of Screen-Printed Monocrystalline Silicon Solar Cells.
250 $a 初版.
260 # $a 雲林縣 : $b 國立虎尾科技大學 , $c 民113.06.
300 $a [12], 80面 : $b 圖, 表 ; $c 30公分.
500 $a 指導教授: 鄭錦隆.
500 $a 學年度: 112.
502 $a 碩士論文--國立虎尾科技大學光電工程系光電與材料科技碩士班.
504 $a 含參考書目.
520 3 $a 本研究論文探討氧化銦鈰應用於網印式單晶矽太陽能電池光電特性之影響，因氧化銦鈰(ICO)具有高移動率、低載子濃度、在近紅外光的區域有優秀的穿透率、可作為太陽能電池的透明導電層、串接電池之間的連接層，與氧化銦錫(ITO)相比有更好的短路電流與光電轉換效率，因此本論文研究氧化銦鈰沉積在玻璃基板與網印式單晶矽太陽能電池的正面，實驗參數包含低濺鍍功率下，摻氫含量對氧化銦鈰的影響、改變濺鍍功率從45 變化至145 W、高濺鍍功率下，氬氣流量對氧化銦鈰的影響、高濺鍍功率下，濺鍍壓力對氧化銦鈰的影響、預鍍後，用空氣與純氧對氧化銦鈰作後處理，同時，透過霍爾效應分析儀、紫外光/可見光/近紅外光光譜儀、熱電子型場發射掃描式電子顯微鏡以及X射線繞射儀，獲取移動率、載子濃度、穿透率、厚度、表面形貌、晶格方向以及晶粒大小等結果，最後應用至網印式單晶矽太陽能電池上面，探討對光電轉換效率的衰減率。實驗結果顯示，在55 W的低功率下，且ICO薄膜內氫含量從0 %至5 %時，ICO薄膜沈積在玻璃基板上的電阻率仍高達102 Ω-cm，當靶材的功率增加，其電阻率下降，當靶材超過135W時，靶材表面有放電現象會影響實驗結果，為保護靶材，濺鍍功率的極限值為135 W，可獲得電阻率為8.7 × 10-2 Ω-cm。在高功率下，當氬氣流量增加，其電阻率下降至1.73 × 10-3 Ω-cm，在高功率下，當濺鍍壓力為5 mTorr，可獲得電阻率為1.49 × 10-3 Ω-cm，在高功率下，預鍍後，用空氣與純氧對ICO作後處理，實驗結果顯示，用空氣與純氧對ICO作後處理，可獲得相近的電阻率為1.49 × 10-3 Ω-cm與1.55 × 10-3 Ω-cm，且將ICO沈積於網印式單晶矽太陽能電池上面，其光電轉換效率分別衰減5.24 %與5.09 %，可知微量的純氧對ICO的影響甚微。.
520 3 $a Effects of indium cerium oxide (ICO) on photovoltaic characteristics of screen-printed monocrystalline silicon solar cells were achieved in this thesis. The ICO possesses high mobility, low carrier concentration, excellent transparency in the near-infrared region, and can serve as a transparent conductive layer for solar cells, as well as a connecting layer between stacked cells. Compared to indium tin oxide (ITO), it exhibits better short-circuit current and photoelectric conversion efficiency. Therefore, the deposition of ICO on the front side of glass substrates and screen-printed monocrystalline silicon solar cells were investigated in this thesis. The experimental parameters, including the effects of hydrogen doping on indium cerium oxide (ICO) at low sputtering power, varying the sputtering power from 45 to 145 W, the impact of argon gas flow on ICO at high sputtering power, the influence of sputtering pressure on ICO at high sputtering power, and post-deposition treatments of ICO using air and pure oxygen. Additionally, through Hall effect analysis, UV/visible/near-infrared spectrometer, thermionic field emission scanning electron microscopy, and X-ray diffraction, results such as mobility, carrier concentration, transmittance, thickness, surface morphology, crystal orientation, and grain size are obtained. Finally, these results are applied to screen-printed monocrystalline silicon solar cells to investigate the decay rate of the conversion efficiency. The experimental results indicate that as at a low power of 55 W, and with hydrogen content within the ICO film ranging from 0 % to 5 %, the resistivity of the ICO film deposited on the glass substrate remains as high as 102 Ω-cm. the power of the target increases, its resistivity decreases. However, when the target exceeds 135 W, there is a phenomenon of discharge on the target surface that affects the experimental results. To protect the target, the upper limit of the sputtering power is 135 W, at which a resistivity of 8.7 × 10-2 Ω-cm can be obtained. At high power, when the argon gas flow rate increases, the resistivity decreases to 1.73 × 10-3 Ω-cm. At high power, when the sputtering pressure is 5 mTorr, a resistivity of 1.49 × 10-3 Ω-cm can be achieved. At high power, post-deposition treatment of ICO with air and pure oxygen resulted in similar resistivities of 1.49 × 10-3 Ω-cm and 1.55 × 10-3 Ω-cm, respectively. When ICO was deposited on screen-printed monocrystalline silicon solar cells, the photoelectric conversion efficiency decreased by 5.24 % and 5.09 %, respectively, indicating minimal impact from trace amounts of pure oxygen on ICO..
563 $a (平裝)
650 # 4 $a sputtering pressure. $3 1449962
650 # 4 $a argon gas flow rate. $3 1449961
650 # 4 $a Sputter power. $3 1449960
650 # 4 $a Hydrogen. $3 672179
650 # 4 $a Monocrystalline silicon solar cell. $3 1449959
650 # 4 $a Screen-printed. $3 1245184
650 # 4 $a Indium cerium oxide. $3 1449958
650 # 4 $a 濺鍍壓力. $3 1449957
650 # 4 $a 氬氣流量. $3 1449956
650 # 4 $a 濺鍍功率. $3 1449924
650 # 4 $a 氫. $3 1246525
650 # 4 $a 單晶矽太陽能電池. $3 1015652
650 # 4 $a 網印式. $3 1151686
650 # 4 $a 氧化銦鈰. $3 1449955
856 7 # $u https://handle.ncl.edu.tw/11296/eh8pq4 $z 電子資源 $2 http