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Materials aspects of GaAs and InP ba...

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Macrander, A. T

Materials aspects of GaAs and InP based structures

Record Type:	Language materials, printed : monographic
Author:	SwaminathanV,
Alternative Intellectual Responsibility:	MacranderA. T,
Place of Publication:	Englewood Cliffs, N. J
Published:	Prentice-Hall;
Year of Publication:	1991
Description:	xvii,606 pill : 24cm;
Subject:	Semiconductors - Materials -
Subject:	Gallium arsenide semiconductors -
ISBN:	0133468267

Materials aspects of GaAs and InP based structures
Swaminathan, V

Materials aspects of GaAs and InP based structures / V. Swaminathan, A. T. Macrander - Englewood Cliffs, N. J : Prentice-Hall, 1991. - xvii,606 p ; ill ; 24cm.
ISBN 0133468267
SemiconductorsGallium arsenide semiconductors -- Materials

Macrander, A. T

Materials aspects of GaAs and InP based structures
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200 1 $a Materials aspects of GaAs and InP based structures $f V. Swaminathan, A. T. Macrander
210 $a Englewood Cliffs, N. J $c Prentice-Hall $d 1991
215 1 $a xvii,606 p $c ill $d 24cm
606 $a Semiconductors $x Materials $3 410247 $2 lc $3 727668
606 $a Gallium arsenide semiconductors $3 400025 $2 lc $3 726822
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701 $a Macrander $b A. T $3 410246
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621.38152 S971 1991

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