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Technology computer aided design = s...

Sarkar, Chandan Kumar.

Technology computer aided design = simulation for VLSI MOSFET /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Technology computer aided design/ edited by Chandan Kumar Sarkar.
其他題名:	simulation for VLSI MOSFET /
其他作者:	Sarkar, Chandan Kumar.
出版者:	Boca Raton :CRC Press, : c2013.,
面頁冊數:	1 online resource (xv, 409 p., [15] p. of plates) :ill. (some col.) :
標題:	Integrated circuits - Congresses. - Very large scale integration -
電子資源:	http://www.crcnetbase.com/isbn/9781466512665
ISBN:	9781466512665 (electronic bk.)

Technology computer aided design = simulation for VLSI MOSFET /
Technology computer aided designsimulation for VLSI MOSFET /[electronic resource] :edited by Chandan Kumar Sarkar. - Boca Raton :CRC Press,c2013. - 1 online resource (xv, 409 p., [15] p. of plates) :ill. (some col.)

Includes bibliographical references and index.

"MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and concepts involved with the TCAD simulation of MOSFET devices. The book describes basic concepts and background related to popular commercial TCAD software as well as recent technologies to improve device performance such as multiple gate MOSFET, FINFET, SOI devices, and high-k gate material devices"--

ISBN: 9781466512665 (electronic bk.)Subjects--Topical Terms:

675648
Integrated circuits
--Very large scale integration--Congresses.

LC Class. No.: TK7874.75 / .T43 2013eb

Dewey Class. No.: 621.39/50285

Technology computer aided design = simulation for VLSI MOSFET /
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020 $a 9781466512665 (electronic bk.)
020 $z 9781466512658 (hardback)
035 $a ocn841809949
040 $a N $c N $d CUS $d YDXCP $d TXA $d E7B $d IDEBK $d CDX $d WAU $d UMI
050 4 $a TK7874.75 $b .T43 2013eb
082 0 4 $a 621.39/50285 $2 23
245 0 0 $a Technology computer aided design $h [electronic resource] : $b simulation for VLSI MOSFET / $c edited by Chandan Kumar Sarkar.
260 $a Boca Raton : $b CRC Press, $c c2013.
300 $a 1 online resource (xv, 409 p., [15] p. of plates) : $b ill. (some col.)
504 $a Includes bibliographical references and index.
520 $a "MOSFET and related high-speed semiconductor devices are spearheading the drive toward smaller, faster, and lower-power electronics. This work concentrates on technology computer aided design (TCAD) and its integration into the IC fabrication process flow. It presents modeling techniques and concepts involved with the TCAD simulation of MOSFET devices. The book describes basic concepts and background related to popular commercial TCAD software as well as recent technologies to improve device performance such as multiple gate MOSFET, FINFET, SOI devices, and high-k gate material devices"-- $c Provided by publisher.
588 $a Description based on print version record.
650 0 $a Integrated circuits $x Very large scale integration $x Computer-aided design $v Congresses. $3 675648 $3 872950
650 0 $a Metal oxide semiconductor field-effect transistors $x Computer-aided design $3 1098538
700 1 $a Sarkar, Chandan Kumar. $3 1051546
856 4 0 $u http://www.crcnetbase.com/isbn/9781466512665

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