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High-frequency GaN-Based Inverter Co...

University of Idaho.

High-frequency GaN-Based Inverter Control Design Using PSIM.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	High-frequency GaN-Based Inverter Control Design Using PSIM./
Author:	Ready, Ryan P.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
Description:	69 p.
Notes:	Source: Masters Abstracts International, Volume: 82-03.
Contained By:	Masters Abstracts International82-03.
Subject:	Electrical engineering. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10788423
ISBN:	9798672124414

High-frequency GaN-Based Inverter Control Design Using PSIM.
Ready, Ryan P.

High-frequency GaN-Based Inverter Control Design Using PSIM. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 69 p.

Source: Masters Abstracts International, Volume: 82-03.

Thesis (M.S.)--University of Idaho, 2020.

This item must not be sold to any third party vendors.

Gallium nitride (GaN) transistors are becoming more common in power electronics. This thesis describes how they can be used to improve solar generators by improving the inverter that they contain. The benefits of using GaN in an inverter include higher efficiency, higher switching speeds, and the ability to reduce the size of some inverter components. The full-bridge inverter topology was chosen for this inverter because of its favorable high-frequency switching characteristics. Using a full-bridge GaN-based inverter evaluation board from Transphorm, Inc., a PI control scheme was successfully designed for this inverter using the simulation software PSIM. This control scheme performed satisfactorily when tested in the inverter showing that PSIM can be a useful design tool for high-frequency GaN-based inverters.

ISBN: 9798672124414Subjects--Topical Terms:

596380
Electrical engineering.
Subjects--Index Terms:

Gallium nitride

High-frequency GaN-Based Inverter Control Design Using PSIM.
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020 $a 9798672124414
035 $a (MiAaPQ)AAI10788423
035 $a AAI10788423
040 $a MiAaPQ $c MiAaPQ
100 1 $a Ready, Ryan P. $0 (orcid)0000-0001-9637-3220 $3 1335212
245 1 0 $a High-frequency GaN-Based Inverter Control Design Using PSIM.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2020
300 $a 69 p.
500 $a Source: Masters Abstracts International, Volume: 82-03.
500 $a Advisor: Hess, Herb L.
502 $a Thesis (M.S.)--University of Idaho, 2020.
506 $a This item must not be sold to any third party vendors.
520 $a Gallium nitride (GaN) transistors are becoming more common in power electronics. This thesis describes how they can be used to improve solar generators by improving the inverter that they contain. The benefits of using GaN in an inverter include higher efficiency, higher switching speeds, and the ability to reduce the size of some inverter components. The full-bridge inverter topology was chosen for this inverter because of its favorable high-frequency switching characteristics. Using a full-bridge GaN-based inverter evaluation board from Transphorm, Inc., a PI control scheme was successfully designed for this inverter using the simulation software PSIM. This control scheme performed satisfactorily when tested in the inverter showing that PSIM can be a useful design tool for high-frequency GaN-based inverters.
590 $a School code: 0089.
650 4 $a Electrical engineering. $3 596380
653 $a Gallium nitride
653 $a GaN
653 $a PSIM
653 $a Transphorm
690 $a 0544
710 2 $a University of Idaho. $b Electrical and Computer Engineering. $3 1213889
773 0 $t Masters Abstracts International $g 82-03.
790 $a 0089
791 $a M.S.
792 $a 2020
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10788423

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