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Design and Simulation of Power Elect...

University of Arkansas.

Design and Simulation of Power Electronics Modules.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Design and Simulation of Power Electronics Modules./
Author:	Jia, Haonan.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
Description:	45 p.
Notes:	Source: Masters Abstracts International, Volume: 81-12.
Contained By:	Masters Abstracts International81-12.
Subject:	Electrical engineering. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27958250
ISBN:	9798643197300

Design and Simulation of Power Electronics Modules.
Jia, Haonan.

Design and Simulation of Power Electronics Modules. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 45 p.

Source: Masters Abstracts International, Volume: 81-12.

Thesis (M.S.E.E.)--University of Arkansas, 2020.

This item must not be sold to any third party vendors.

Silicon carbide (SiC), a wide-bandgap semiconductor material, greatly improves the performance of power semiconductor devices. Its electrical characteristics have a positive impact on the size, efficiency, and weight of the power electronics systems. Parasitic circuit elements and thermal properties are critical to the power electronics module design. This thesis investigates the various aspects of layout design, electrical simulation, thermal simulation, and peripheral design of SiC power electronic modules. ANSYS simulator was used to design and simulate the power electronic modules. The parasitic circuit elements of the power module were obtained from the device parameters given in the datasheet of these SiC bare devices together with the model established in the Q3D simulator. A temperature simulation model is established using SolidWorks to investigate the thermal performance of the power module. The designs of soldering and sintering fixtures are presented. A 1.7kV silicon carbide (SiC) junction field-effect transistor (JFET) cascode power electronic module was designed as an example. By comparing the different module designs, some conclusions are elucidated.

ISBN: 9798643197300Subjects--Topical Terms:

596380
Electrical engineering.
Subjects--Index Terms:

Cascode

Design and Simulation of Power Electronics Modules.
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005 20210910100643.5
008 211029s2020 ||||||||||||||||| ||eng d
020 $a 9798643197300
035 $a (MiAaPQ)AAI27958250
035 $a AAI27958250
040 $a MiAaPQ $c MiAaPQ
100 1 $a Jia, Haonan. $0 (orcid)0000-0002-8749-7704 $3 1335280
245 1 0 $a Design and Simulation of Power Electronics Modules.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2020
300 $a 45 p.
500 $a Source: Masters Abstracts International, Volume: 81-12.
500 $a Advisor: Ang, Simon S.
502 $a Thesis (M.S.E.E.)--University of Arkansas, 2020.
506 $a This item must not be sold to any third party vendors.
520 $a Silicon carbide (SiC), a wide-bandgap semiconductor material, greatly improves the performance of power semiconductor devices. Its electrical characteristics have a positive impact on the size, efficiency, and weight of the power electronics systems. Parasitic circuit elements and thermal properties are critical to the power electronics module design. This thesis investigates the various aspects of layout design, electrical simulation, thermal simulation, and peripheral design of SiC power electronic modules. ANSYS simulator was used to design and simulate the power electronic modules. The parasitic circuit elements of the power module were obtained from the device parameters given in the datasheet of these SiC bare devices together with the model established in the Q3D simulator. A temperature simulation model is established using SolidWorks to investigate the thermal performance of the power module. The designs of soldering and sintering fixtures are presented. A 1.7kV silicon carbide (SiC) junction field-effect transistor (JFET) cascode power electronic module was designed as an example. By comparing the different module designs, some conclusions are elucidated.
590 $a School code: 0011.
650 4 $a Electrical engineering. $3 596380
653 $a Cascode
653 $a JFET
653 $a Power module fabrication
653 $a SiC
690 $a 0544
710 2 $a University of Arkansas. $b Electrical Engineering. $3 1182918
773 0 $t Masters Abstracts International $g 81-12.
790 $a 0011
791 $a M.S.E.E.
792 $a 2020
793 $a English
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27958250

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