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不同退火溫度對氧化鎵薄膜/氧化鋅奈米柱壓電式奈米發電機之自供電深紫外光感...

陳泓宇

不同退火溫度對氧化鎵薄膜/氧化鋅奈米柱壓電式奈米發電機之自供電深紫外光感測器的製造和特性分析 = = Fabrication and Characterization of Self-Powered Deep Ultraviolet Photodetectors Based on PENGS with Ga2O3 Film/ZnO Nanorods at Different Annealing Temperatures /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	不同退火溫度對氧化鎵薄膜/氧化鋅奈米柱壓電式奈米發電機之自供電深紫外光感測器的製造和特性分析 =/ 陳泓宇.
Reminder of title:	Fabrication and Characterization of Self-Powered Deep Ultraviolet Photodetectors Based on PENGS with Ga2O3 Film/ZnO Nanorods at Different Annealing Temperatures /
remainder title:	Fabrication and Characterization of Self-Powered Deep Ultraviolet Photodetectors Based on PENGS with Ga2O3 Film/ZnO Nanorods at Different Annealing Temperatures.
Author:	陳泓宇
Published:	雲林縣 :國立虎尾科技大學 , : 民113.07.,
Description:	[13], 97面 :圖, 表 ; : 30公分.;
Notes:	指導教授: 姬梁文.
Subject:	deep ultraviolet light sensor. -
Online resource:	電子資源

不同退火溫度對氧化鎵薄膜/氧化鋅奈米柱壓電式奈米發電機之自供電深紫外光感測器的製造和特性分析 = = Fabrication and Characterization of Self-Powered Deep Ultraviolet Photodetectors Based on PENGS with Ga2O3 Film/ZnO Nanorods at Different Annealing Temperatures /
陳泓宇

不同退火溫度對氧化鎵薄膜/氧化鋅奈米柱壓電式奈米發電機之自供電深紫外光感測器的製造和特性分析 =Fabrication and Characterization of Self-Powered Deep Ultraviolet Photodetectors Based on PENGS with Ga2O3 Film/ZnO Nanorods at Different Annealing Temperatures /Fabrication and Characterization of Self-Powered Deep Ultraviolet Photodetectors Based on PENGS with Ga2O3 Film/ZnO Nanorods at Different Annealing Temperatures.陳泓宇. - 初版. - 雲林縣 :國立虎尾科技大學 ,民113.07. - [13], 97面 :圖, 表 ;30公分.

指導教授: 姬梁文.

碩士論文--國立虎尾科技大學光電工程系光電與材料科技碩士班.

含參考書目.

自供電感測器與傳統感測器相較之下，不受外部電源限制，具有更長的使用壽命，適用於各種環境和場合。本次研究為退火溫度對氧化鎵薄膜/氧化鋅奈米柱壓電式奈米發電機(PENG)之自供電深紫外光感測器的製造和特性分析。氧化鎵（Ga2O3）是一種超寬能隙半導體材料，它在深紫外區（200-400 nm）具有優異的吸收特性，使其成為紫外光感測器的理想材料。本研究的自供電感測元件下電極是在銅基板(Copper substrate)使用水熱法生長氧化鋅奈米柱，再利用射頻磁控濺鍍來濺鍍氧化鎵薄膜於氧化鋅奈米柱上，最後使用高溫退火爐進行高溫退火。Ga2O3薄膜分別在400℃、500℃、600℃和700℃下退火1小時。結果表示，退火溫度到達600℃，紫外光感測器的響應度越高。上電極的製作，使用自定義條狀圖型的遮罩覆蓋在塑膠基板(PET)，利用射頻磁控濺鍍來濺鍍銀薄膜作為上電極。研究中使用自製敲擊系統驅動PENG，進行電流、電壓和光響應的量測，以利探討數據的變化。實驗結果得知，製作的PENG在無照光以及254nm波長照射下，輸出電壓分別為154mV和246mV。在254nm波長照射下，輸出電壓上升了60%。代表我們所研發的自供電感測元件對於254nm波長具有出色的響應。.

(平裝)Subjects--Topical Terms:

1449940
deep ultraviolet light sensor.

不同退火溫度對氧化鎵薄膜/氧化鋅奈米柱壓電式奈米發電機之自供電深紫外光感測器的製造和特性分析 = = Fabrication and Characterization of Self-Powered Deep Ultraviolet Photodetectors Based on PENGS with Ga2O3 Film/ZnO Nanorods at Different Annealing Temperatures /
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245 1 0 $a 不同退火溫度對氧化鎵薄膜/氧化鋅奈米柱壓電式奈米發電機之自供電深紫外光感測器的製造和特性分析 = $b Fabrication and Characterization of Self-Powered Deep Ultraviolet Photodetectors Based on PENGS with Ga2O3 Film/ZnO Nanorods at Different Annealing Temperatures / $c 陳泓宇.
246 1 1 $a Fabrication and Characterization of Self-Powered Deep Ultraviolet Photodetectors Based on PENGS with Ga2O3 Film/ZnO Nanorods at Different Annealing Temperatures.
250 $a 初版.
260 # $a 雲林縣 : $b 國立虎尾科技大學 , $c 民113.07.
300 $a [13], 97面 : $b 圖, 表 ; $c 30公分.
500 $a 指導教授: 姬梁文.
500 $a 學年度: 112.
502 $a 碩士論文--國立虎尾科技大學光電工程系光電與材料科技碩士班.
504 $a 含參考書目.
520 3 $a 自供電感測器與傳統感測器相較之下，不受外部電源限制，具有更長的使用壽命，適用於各種環境和場合。本次研究為退火溫度對氧化鎵薄膜/氧化鋅奈米柱壓電式奈米發電機(PENG)之自供電深紫外光感測器的製造和特性分析。氧化鎵（Ga2O3）是一種超寬能隙半導體材料，它在深紫外區（200-400 nm）具有優異的吸收特性，使其成為紫外光感測器的理想材料。本研究的自供電感測元件下電極是在銅基板(Copper substrate)使用水熱法生長氧化鋅奈米柱，再利用射頻磁控濺鍍來濺鍍氧化鎵薄膜於氧化鋅奈米柱上，最後使用高溫退火爐進行高溫退火。Ga2O3薄膜分別在400℃、500℃、600℃和700℃下退火1小時。結果表示，退火溫度到達600℃，紫外光感測器的響應度越高。上電極的製作，使用自定義條狀圖型的遮罩覆蓋在塑膠基板(PET)，利用射頻磁控濺鍍來濺鍍銀薄膜作為上電極。研究中使用自製敲擊系統驅動PENG，進行電流、電壓和光響應的量測，以利探討數據的變化。實驗結果得知，製作的PENG在無照光以及254nm波長照射下，輸出電壓分別為154mV和246mV。在254nm波長照射下，輸出電壓上升了60%。代表我們所研發的自供電感測元件對於254nm波長具有出色的響應。.
520 3 $a Compared to traditional sensors, self-powered sensors are not constrained by external power sources, offering a longer lifespan and suitability for various environments and applications. This study focuses on the fabrication and characterization of self-powered deep ultraviolet (DUV) photodetectors based on gallium oxide (Ga2O3) thin films/zinc oxide (ZnO) nanorod piezoelectric nanogenerators (PENG), with annealing temperature as the variable. Gallium oxide (Ga2O3) is an ultra-wide bandgap semiconductor material that exhibits excellent absorption properties in the deep ultraviolet range (200-400 nm), making it an ideal material for ultraviolet photodetectors. In this study, the self-powered sensing device's bottom electrode is fabricated by growing zinc oxide nanorods on a copper substrate using a hydrothermal method, followed by RF magnetron sputtering to deposit a gallium oxide thin film onto the zinc oxide nanorods. Finally, high-temperature annealing is performed using a high-temperature annealing furnace. The Ga2O3 thin film is annealed at 400°C, 500°C, 600°C, and 700°C for 1 hour, respectively. The results indicate that when the annealing temperature reaches 600°C, the responsivity of the ultraviolet sensor increases. For the fabrication of the top electrode, a custom strip-patterned mask is used to cover a plastic substrate (PET), and silver thin film is sputtered using RF magnetron sputtering to serve as the top electrode. A self-made tapping system was employed to drive the PENG for measuring current, voltage, and light response to investigate data variations. Experimental results revealed that the fabricated PENG exhibited output voltages of 154mV and 246mV under no light and 254nm wavelength illumination, respectively, representing a 60% increase in output voltage under 254nm wavelength illumination. This indicates excellent responsiveness of the developed self-powered sensor to 254nm wavelength light..
563 $a (平裝)
650 # 4 $a deep ultraviolet light sensor. $3 1449940
650 # 4 $a self-powered nanogenerator. $3 1449939
650 # 4 $a hydrothermal method. $3 1016580
650 # 4 $a gallium oxide. $3 1449860
650 # 4 $a nanopillars. $3 1449938
650 # 4 $a Zinc oxide. $3 745172
650 # 4 $a 深紫外光感測器. $3 1449937
650 # 4 $a 自供電奈米發電機. $3 1339483
650 # 4 $a 水熱法. $3 1011336
650 # 4 $a 氧化鎵. $3 1421618
650 # 4 $a 奈米柱. $3 999316
650 # 4 $a 氧化鋅. $3 995852
856 7 # $u https://handle.ncl.edu.tw/11296/a9dxww $z 電子資源 $2 http