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The Role of Semiconducting Electronic Structure on Static and Transient Plasmonic Properties.

Record Type:	Language materials, manuscript : Monograph/item
Title/Author:	The Role of Semiconducting Electronic Structure on Static and Transient Plasmonic Properties./
Author:	Kuszynski, Jason Eric.
Description:	1 online resource (136 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 85-12, Section: B.
Contained By:	Dissertations Abstracts International85-12B.
Subject:	Physical chemistry. -
Online resource:	click for full text (PQDT)
ISBN:	9798382782232

The Role of Semiconducting Electronic Structure on Static and Transient Plasmonic Properties.
Kuszynski, Jason Eric.

The Role of Semiconducting Electronic Structure on Static and Transient Plasmonic Properties. - 1 online resource (136 pages)

Source: Dissertations Abstracts International, Volume: 85-12, Section: B.

Thesis (Ph.D.)--The Florida State University, 2024.

Includes bibliographical references

The field of plasmonics as a whole is gathering widespread interest due to their wide range of applications and new technology advancements because of their enhancement of light-matter interactions. Although scientists have largely used noble metals plasmonic metals such as gold, silver, or aluminum, the growing field of plasmonic semiconductor nanocrystals (PSNCs) still require extensive research towards how the semiconducting electronic structure impacts relevant properties such as charge carrier mobility, conductivity, and near field enhancement. This work focuses on how the host nanocrystal density of states directly impacts and modifies the plasmonic properties of interest in both the static and ultrafast transient time regimes. Chapter 1 introduces the concept of plasmons starting from the simple harmonic oscillator model leading to the free electron model's critical relationship for plasmon frequency, carrier density, and carrier effective mass. From there, the concept of band theory is introduced, and the interactions of charge carrier quasiparticles with the semiconducting electronic structure are outlined and discussed. Chapter 2 introduces the intermediate band semiconductor, Cu5FeS4, where magnetic circular dichroism is used to analyze the carrier effective mass as a function of applied magnetic field. Chapter 3 introduces one of the highest energy PSNCs in literature to date, WO3-x, where transient absorption relaxation dynamics are deconvoluted for plasmon and optical band gap excited regimes. Chapter 4 turns to CuxFeS4 (x=3,5,7), where the ratio of Cu:Fe is shown to modulate the hole-phonon and phonon-phonon transient absorption relaxation rates correlated with carrier effective mass and plasmon damping frequency respectively. Overall, this thesis showcases that static plasmon properties correlate well with transient plasmonic properties, where experiments such as magnetic circular dichroism and transient absorption are effective tools for developing the correlations needed for predicting desired plasmonic properties when designing novel PSNCs for future applications.

Electronic reproduction.
Ann Arbor, Mich. :
ProQuest,
2024

Mode of access: World Wide Web

ISBN: 9798382782232Subjects--Topical Terms:

1148725
Physical chemistry.
Subjects--Index Terms:

NanocrystalsIndex Terms--Genre/Form:

554714
Electronic books.

The Role of Semiconducting Electronic Structure on Static and Transient Plasmonic Properties.
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520 $a The field of plasmonics as a whole is gathering widespread interest due to their wide range of applications and new technology advancements because of their enhancement of light-matter interactions. Although scientists have largely used noble metals plasmonic metals such as gold, silver, or aluminum, the growing field of plasmonic semiconductor nanocrystals (PSNCs) still require extensive research towards how the semiconducting electronic structure impacts relevant properties such as charge carrier mobility, conductivity, and near field enhancement. This work focuses on how the host nanocrystal density of states directly impacts and modifies the plasmonic properties of interest in both the static and ultrafast transient time regimes. Chapter 1 introduces the concept of plasmons starting from the simple harmonic oscillator model leading to the free electron model's critical relationship for plasmon frequency, carrier density, and carrier effective mass. From there, the concept of band theory is introduced, and the interactions of charge carrier quasiparticles with the semiconducting electronic structure are outlined and discussed. Chapter 2 introduces the intermediate band semiconductor, Cu5FeS4, where magnetic circular dichroism is used to analyze the carrier effective mass as a function of applied magnetic field. Chapter 3 introduces one of the highest energy PSNCs in literature to date, WO3-x, where transient absorption relaxation dynamics are deconvoluted for plasmon and optical band gap excited regimes. Chapter 4 turns to CuxFeS4 (x=3,5,7), where the ratio of Cu:Fe is shown to modulate the hole-phonon and phonon-phonon transient absorption relaxation rates correlated with carrier effective mass and plasmon damping frequency respectively. Overall, this thesis showcases that static plasmon properties correlate well with transient plasmonic properties, where experiments such as magnetic circular dichroism and transient absorption are effective tools for developing the correlations needed for predicting desired plasmonic properties when designing novel PSNCs for future applications.
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