electron confinement layer.

藉由優化氧化鋅薄膜結構提升氧化鋅/p型矽基板二極體元件特性之研究 = = Study on improving the characteristics of ZnO/p-type silicon substrate diode device by optimizing the structure of ZnO thin film. / by: (Language materials, printed)

electron confinement layer.

RF magnetron co-sputtering system.

undoped zinc oxide.

zinc oxide/p-type silicon heterojunction diode.

射頻磁控共濺鍍系統.

未摻雜氧化鋅.

氧化鋅/p型矽異質接面二極體.

電子侷限層.