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具有表面粗化結構之上發光量子點電致發光二極體 = = Top-emiss...

李亞軒

具有表面粗化結構之上發光量子點電致發光二極體 = = Top-emission quantum dot electroluminescent diodes with surface roughness /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	具有表面粗化結構之上發光量子點電致發光二極體 =/ 李亞軒.
Reminder of title:	Top-emission quantum dot electroluminescent diodes with surface roughness /
remainder title:	Top-emission quantum dot electroluminescent diodes with surface roughness.
Author:	李亞軒
Published:	雲林縣 :國立虎尾科技大學 , : 民113.06.,
Description:	[9], 65面 :圖, 表 ; : 30公分.;
Notes:	指導教授: 莊賦祥, 廖得照.
Subject:	electroluminescent diode. -
Online resource:	電子資源

具有表面粗化結構之上發光量子點電致發光二極體 = = Top-emission quantum dot electroluminescent diodes with surface roughness /
李亞軒

具有表面粗化結構之上發光量子點電致發光二極體 =Top-emission quantum dot electroluminescent diodes with surface roughness /Top-emission quantum dot electroluminescent diodes with surface roughness.李亞軒. - 初版. - 雲林縣 :國立虎尾科技大學 ,民113.06. - [9], 65面 :圖, 表 ;30公分.

指導教授: 莊賦祥, 廖得照.

碩士論文--國立虎尾科技大學光電工程系光電與材料科技碩士班.

含參考書目.

本論文以量子點作為發光材料，分別製作下發光與上發光量子點發光二極體，藉由元件結果分別調整元件結構之參數，使元件達到最佳厚度以呈現最佳光學特性。下發光量子點發光二極體結構為Glass/ITO/PEDOT:PSS/Poly-TPD/QD/TPBi/LiF/Al，透過改變電子注入層、電洞傳輸層及電子傳輸層之厚度，以此降低啟動電壓及提升光學特性，元件電流可降至29.08mA並保持良好的發光表現1393 cd/m2及效率4.78 cd/A。上發光量子點發光二極體導入無機材料ZnO及替代有機材料TmPyPB作為電子傳輸層，兩者皆有高載子遷移率之特性，其結構為Glass/Al/ZnO/QD/TCTA/MoO3/Ag和Glass/Al/LiF/TmPyPB/QD/TCTA/MoO3/Ag，分別表現出301.8 cd/m2與757.3 cd/m2之亮度，而由於其高電流，因此透過改變MoO3之厚度，降低電洞注入能力進而降低電流，實驗結果顯示成功地將電流降低至10.9 mA且亮度仍保持在702.2 cd/m2，使得效率提升至6.43 cd/A。最後使用具表面粗化結構之基板製作上發光元件，由於其表面粗化結構周圍的TiO2溶膠-凝膠過厚，元件中的載子不易傳輸，因此在高電壓下無法表現出較高的亮度，而在低電壓下其具有基板表面粗化結構之元件之亮度明顯高於為具有粗化結構之元件。.

(平裝)Subjects--Topical Terms:

1449883
electroluminescent diode.

具有表面粗化結構之上發光量子點電致發光二極體 = = Top-emission quantum dot electroluminescent diodes with surface roughness /
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100 1 $a 李亞軒 $3 1170978
245 1 0 $a 具有表面粗化結構之上發光量子點電致發光二極體 = $b Top-emission quantum dot electroluminescent diodes with surface roughness / $c 李亞軒.
246 1 1 $a Top-emission quantum dot electroluminescent diodes with surface roughness.
250 $a 初版.
260 # $a 雲林縣 : $b 國立虎尾科技大學 , $c 民113.06.
300 $a [9], 65面 : $b 圖, 表 ; $c 30公分.
500 $a 指導教授: 莊賦祥, 廖得照.
500 $a 學年度: 112.
502 $a 碩士論文--國立虎尾科技大學光電工程系光電與材料科技碩士班.
504 $a 含參考書目.
520 3 $a 本論文以量子點作為發光材料，分別製作下發光與上發光量子點發光二極體，藉由元件結果分別調整元件結構之參數，使元件達到最佳厚度以呈現最佳光學特性。下發光量子點發光二極體結構為Glass/ITO/PEDOT:PSS/Poly-TPD/QD/TPBi/LiF/Al，透過改變電子注入層、電洞傳輸層及電子傳輸層之厚度，以此降低啟動電壓及提升光學特性，元件電流可降至29.08mA並保持良好的發光表現1393 cd/m2及效率4.78 cd/A。上發光量子點發光二極體導入無機材料ZnO及替代有機材料TmPyPB作為電子傳輸層，兩者皆有高載子遷移率之特性，其結構為Glass/Al/ZnO/QD/TCTA/MoO3/Ag和Glass/Al/LiF/TmPyPB/QD/TCTA/MoO3/Ag，分別表現出301.8 cd/m2與757.3 cd/m2之亮度，而由於其高電流，因此透過改變MoO3之厚度，降低電洞注入能力進而降低電流，實驗結果顯示成功地將電流降低至10.9 mA且亮度仍保持在702.2 cd/m2，使得效率提升至6.43 cd/A。最後使用具表面粗化結構之基板製作上發光元件，由於其表面粗化結構周圍的TiO2溶膠-凝膠過厚，元件中的載子不易傳輸，因此在高電壓下無法表現出較高的亮度，而在低電壓下其具有基板表面粗化結構之元件之亮度明顯高於為具有粗化結構之元件。.
520 3 $a This paper utilizes quantum dots as the luminescent material to fabricate both bottom-emitting and top-emitting quantum dot light-emitting diodes (QLEDs). By adjusting the parameters of the device structure based on the device results, optimal thicknesses are achieved to exhibit the best optical properties. The structure of the bottom-emitting QLED is Glass/ITO/PEDOT:PSS/Poly-TPD/QD/TPBi/LiF/Al. By varying the thickness of the electron injection layer, hole transport layer, and electron transport layer, the operating voltage is reduced and optical properties are enhanced. The device current can be reduced to 29.08 mA while maintaining good luminance performance of 1393 cd/m² and an efficiency of 4.78 cd/A. For the top-emitting QLED, inorganic material ZnO and the alternative organic material TmPyPB are introduced as the electron transport layer, both possessing high carrier mobility characteristics. The structures are Glass/Al/ZnO/QD/TCTA/MoO3/Ag and Glass/Al/LiF/TmPyPB/QD/TCTA/MoO3/Ag, exhibiting luminance of 301.8 cd/m² and 757.3 cd/m² respectively. Due to high current, the thickness of MoO3 is adjusted to reduce hole injection capability and consequently decrease the current. Experimental results successfully lower the current to 10.9 mA while maintaining luminance at 702.2 cd/m², leading to an efficiency improvement to 6.43 cd/A. The light-emitting device was fabricated on a substrate with a roughened surface structure. Due to the excessive thickness of the TiO2 sol-gel surrounding the roughened surface structure, carrier transport within the device is impeded. Consequently, the device cannot achieve higher brightness at high voltages. However, at lower voltages, the brightness of the device with the roughened substrate surface structure is significantly higher compared to the device without the roughened structure..
563 $a (平裝)
650 # 4 $a electroluminescent diode. $3 1449883
650 # 4 $a surface roughening. $3 1449882
650 # 4 $a top-emission. $3 1449881
650 # 4 $a quantum dots. $3 1339680
650 # 4 $a 電致發光二極體. $3 1449880
650 # 4 $a 表面粗化. $3 1449879
650 # 4 $a 上發光. $3 1449878
650 # 4 $a 量子點. $3 1091798
856 7 # $u https://handle.ncl.edu.tw/11296/p54thz $z 電子資源 $2 http