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Fundamental aspects of silicon oxidation

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Chabal, Yves Jean (1952)

Fundamental aspects of silicon oxidation

Record Type:	Language materials, printed : monographic
Secondary Intellectual Responsibility:	ChabalYves Jean, 1952
Place of Publication:	Berlin
Published:	Springer;
Year of Publication:	c2001
Description:	xiii, 260 pill. (some col.) : 24 cm;
Series:	Springer series in materials science
Subject:	Silicon oxide -
ISBN:	354041682X

Fundamental aspects of silicon oxidation
Fundamental aspects of silicon oxidation / Yves J. Chabal (ed.) - Berlin : Springer, c2001. - xiii, 260 p ; ill. (some col.) ; 24 cm. - (Springer series in materials science ; 46).
Includes bibliographical references and index.
ISBN 354041682X
Silicon oxide

Chabal, Yves Jean

Fundamental aspects of silicon oxidation
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010 1 $1 572 $a 354041682X $b (pbk.) $d NT
100 $a 20080130f 2001m y0engy01 b
101 0 $a eng
200 1 $a Fundamental aspects of silicon oxidation $f Yves J. Chabal (ed.)
210 $a Berlin $c Springer $d c2001
215 0 $a xiii, 260 p $c ill. (some col.) $d 24 cm
225 2 $a Springer series in materials science $v 46
320 $a Includes bibliographical references and index
410 0 $1 2001 $a ;46 $a Springer series in materials science
606 $a Silicon oxide $3 437743 $2 lc $3 730186
676 $a 546/.6832 $v 21
680 $a QD181.S6 $b F85 2001
702 $a Chabal $b Yves Jean $f 1952 $3 437742
801 1 $a cw $b 國立虎尾科技大學圖書館圖書館 $c 20020118

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E021337

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546.6832 F981 2001

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