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The Insulated Gate Bipolar Transisto...

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Khanna, Vinod Kumar

The Insulated Gate Bipolar Transistor (IGBT) : Theory and Design

Record Type:	Language materials, printed : monographic
Title Information:	Theory and Design
Author:	KhannaVinod Kumar,
Place of Publication:	Piscataway, NJ
Published:	IEEE Press;
Year of Publication:	c2003
Description:	xix, 627 pill : 24 cm;
Subject:	Insulated gate bipolar transistors -
ISBN:	0471238457

The Insulated Gate Bipolar Transistor (IGBT) : Theory and Design
Khanna, Vinod Kumar

The Insulated Gate Bipolar Transistor (IGBT) : Theory and Design / Vinod Kumar Khanna - Piscataway, NJ : IEEE Press, c2003. - xix, 627 p ; ill ; 24 cm.
Includes bibliographical references and index.
ISBN 0471238457
Insulated gate bipolar transistors

The Insulated Gate Bipolar Transistor (IGBT) : Theory and Design
LDR:00644cam 2200205 i 450 001 491307
005 20101023191355.0
009 a2003043251
010 1 $3 ,701 $a 0471238457 $b (hbk.) $d NT
100 $a 20080130f 2003m y0engy01 b
101 0 $a eng
200 1 $a The Insulated Gate Bipolar Transistor (IGBT) $e Theory and Design $f Vinod Kumar Khanna
210 $a Piscataway, NJ $c IEEE Press $d c2003
215 0 $a xix, 627 p $c ill $d 24 cm
320 $a Includes bibliographical references and index
510 1 $a IGBT
606 $a Insulated gate bipolar transistors $3 482717 $2 lc $3 730503
676 $a 621.3815/282 $v 21
680 $a TK7971.96.B55 $b K49 2003
700 $a Khanna $b Vinod Kumar $3 482716
801 0 $b DLC
801 0 $a cw $b BIB $c 20070124
801 1 $a cw $b 虎尾科技大學圖書館 $c 20070124

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