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Nanoscale transistors : device physi...
~
Lundstrom, Mark S.
Nanoscale transistors : device physics, modeling and simulation
Record Type:
Language materials, printed : monographic
Title Information:
device physics, modeling and simulation
Author:
LundstromMark S.,
Secondary Intellectual Responsibility:
GuoJing, 1977
Place of Publication:
New York
Published:
Springer;
Year of Publication:
c2006
Description:
vi, 217 pll : 4 cm;
Subject:
Nanostructured materials - Mathematical models -
Subject:
Metal oxide semiconductor field-effect transistors - Mathematical models -
Subject:
Nanotechnology -
ISBN:
0387280033
Nanoscale transistors : device physics, modeling and simulation
Lundstrom, Mark S.
Nanoscale transistors
: device physics, modeling and simulation / Mark S. Lundstrom, Jing Guo - New York : Springer, c2006. - vi, 217 p ; ll ; 4 cm.
Includes bibliographical references and index.
ISBN 0387280033ISBN 9780387280028ISBN 0387280022
Nanostructured materialsMetal oxide semiconductor field-effect transistorsNanotechnology -- Mathematical models -- Mathematical models
Guo, Jing
Nanoscale transistors : device physics, modeling and simulation
LDR
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device physics, modeling and simulation
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Includes bibliographical references and index
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虎尾科技大學圖書館
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20080908
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