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Hf-based high-k dielectrics : proces...

Kim, Young-Hee

Hf-based high-k dielectrics : process development, performance characterization, and reliability

Record Type:	Language materials, printed : monographic
Title Information:	process development, performance characterization, and reliability
Author:	KimYoung-Hee,
Secondary Intellectual Responsibility:	LeeJack Chung-Yeung,
Place of Publication:	[San Rafael, Calif.]
Published:	Morgan & Claypool Publishers;
Year of Publication:	c2005
Edition:	1st ed
Description:	x, 92 pll : 24cm;
Series:
Subject:	Metal oxide semiconductor field-effect transistors -
Subject:	Breakdown (Electricity) -
Subject:	Semiconductors - Junctions -
Subject:	Integrated circuits - Reliability -
Subject:	Hafnium oxide -
Subject:	Dielectrics -
Notes:	This volume is a printed version of a work that appears in, "Synthesis, the digital library of engineering and computer science"
ISBN:	1598290045

Hf-based high-k dielectrics : process development, performance characterization, and reliability
Kim, Young-Hee

Hf-based high-k dielectrics : process development, performance characterization, and reliability / Young-Hee Kim, Jack C. Lee - 1st ed. - [San Rafael, Calif.] : Morgan & Claypool Publishers, c2005. - x, 92 p ; ll ; 24cm. - ( ; v. 1, no. 1).
This volume is a printed version of a work that appears in, "Synthesis, the digital library of engineering and computer science".
Includes bibliographical references.
ISBN 1598290045ISBN 9781598293548
Metal oxide semiconductor field-effect transistorsBreakdown (Electricity)SemiconductorsIntegrated circuitsHafnium oxideDielectrics -- Junctions -- Reliability

Lee, Jack Chung-Yeung

Hf-based high-k dielectrics : process development, performance characterization, and reliability
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