國立虎尾科技大學 |

以氧化銦鋅為陽極製作有機發光二極體 = Organic Light Emitting Diodes by Using Indium Zinc Oxide as Anode

紀錄類型:	書目-語言資料,印刷品 : 單行本
並列題名:	Organic Light Emitting Diodes by Using Indium Zinc Oxide as Anode
作者:	李枝茂,
其他團體作者:	國立虎尾科技大學
出版地:	[雲林縣]
出版者:	撰者; 撰者;
出版年:	民96[2007]
面頁冊數:	80面圖,表 : 30公分;
標題:	有機發光二極體
標題:	indium tin oxide
電子資源:	http://140.130.12.251/ETD-db/ETD-search-c/view_etd?URN=etd-0725107-000109
摘要註:	本研究分為兩部份，第一部份以氧化銦錫當作陽極部份製作有機發光二極體，並藉由加入電洞注入層來提升元件發光效率，效率由2.81 cd/A提高至3.55 cd/A。實驗第二部份則利用射頻磁控共濺鍍系統，同時濺鍍氧化銦錫及氧化鋅於玻璃基板，在室溫條件下製備氧化銦鋅透明導電薄膜。分別控制氧化銦錫和氧化鋅靶材之濺鍍功率來調變氧化銦鋅組成，並控制沉積時間製備不同厚度之氧化銦鋅薄膜，作為有機發光二極體之陽極電極，探討不同氧化銦鋅厚度對有機發光二極體光電特性之影響。當氧化銦鋅厚度為390 nm時，可獲得最佳發光效率為2.97 cd/A @11.03 mA/cm2，此時之發光亮度為644 cd/m2@13 V。 This study consists of two parts. The first part of this study produces organic light emitting diodes by indium tin oxide as anode. The device luminance efficiency advanced by acceded to the hole injection layer. The luminance efficiency advanced from 2.81 cd/A to 3.55 cd/A. The second part of this study producing transparent and conductive thin film of Indium zinc oxide in normal room temperature by using RF magnetron cosputtering system sputtering indium tin oxide and zinc oxide on glass substrate at the same time. And respectively control the sputtering power of ITO and ZnO targets to modulate IZO component and control deposition time to produce different thickness of IZO film as the anode of electrode of organic light emitting diodes and, furthermore, to research the effect of different IZO thickness on photoelectrical characteristic of organic light emitting diodes. When the thickness is in 390 nm, it can obtain an optimum luminance efficiency of 2.97cd/A @11.03 mA/cm2, and luminance 644 cd/m2@13 V.

以氧化銦鋅為陽極製作有機發光二極體 = Organic Light Emitting Diodes by Using Indium Zinc Oxide as Anode
李, 枝茂

以氧化銦鋅為陽極製作有機發光二極體 = Organic Light Emitting Diodes by Using Indium Zinc Oxide as Anode / 李枝茂撰 - [雲林縣] : 撰者, 民96[2007]. - 80面 ; 圖,表 ; 30公分.
參考書目：面.
有機發光二極體indium tin oxide

以氧化銦鋅為陽極製作有機發光二極體 = Organic Light Emitting Diodes by Using Indium Zinc Oxide as Anode
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330 $a 本研究分為兩部份，第一部份以氧化銦錫當作陽極部份製作有機發光二極體，並藉由加入電洞注入層來提升元件發光效率，效率由2.81 cd/A提高至3.55 cd/A。實驗第二部份則利用射頻磁控共濺鍍系統，同時濺鍍氧化銦錫及氧化鋅於玻璃基板，在室溫條件下製備氧化銦鋅透明導電薄膜。分別控制氧化銦錫和氧化鋅靶材之濺鍍功率來調變氧化銦鋅組成，並控制沉積時間製備不同厚度之氧化銦鋅薄膜，作為有機發光二極體之陽極電極，探討不同氧化銦鋅厚度對有機發光二極體光電特性之影響。當氧化銦鋅厚度為390 nm時，可獲得最佳發光效率為2.97 cd/A @11.03 mA/cm2，此時之發光亮度為644 cd/m2@13 V。 This study consists of two parts. The first part of this study produces organic light emitting diodes by indium tin oxide as anode. The device luminance efficiency advanced by acceded to the hole injection layer. The luminance efficiency advanced from 2.81 cd/A to 3.55 cd/A. The second part of this study producing transparent and conductive thin film of Indium zinc oxide in normal room temperature by using RF magnetron cosputtering system sputtering indium tin oxide and zinc oxide on glass substrate at the same time. And respectively control the sputtering power of ITO and ZnO targets to modulate IZO component and control deposition time to produce different thickness of IZO film as the anode of electrode of organic light emitting diodes and, furthermore, to research the effect of different IZO thickness on photoelectrical characteristic of organic light emitting diodes. When the thickness is in 390 nm, it can obtain an optimum luminance efficiency of 2.97cd/A @11.03 mA/cm2, and luminance 644 cd/m2@13 V.
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