國立虎尾科技大學 |

Language: English

Back

低壓真空系統基板溫度差異分析 = Temperature differe...

Wen-Cheng Lee

低壓真空系統基板溫度差異分析 = Temperature difference of substrate in Low Pressure Vacuum System

Record Type:	Language materials, printed : monographic
Paralel Title:	Temperature difference of substrate in Low Pressure Vacuum System
Author:	李文正,
Secondary Intellectual Responsibility:	莊賦祥,
Secondary Intellectual Responsibility:	國立虎尾科技大學
Place of Publication:	雲林縣
Published:	國立虎尾科技大學;
Year of Publication:	民97[2008]
Edition:	初版
Description:	51面圖,表 : 30公分;
Subject:	溫度
Subject:	Temperature
Online resource:	http://140.130.12.251/ETD-db/ETD-search-c/view_etd?URN=etd-0221108-111508
Summary:	隨著科技進步，半導體線徑奈米化，從早期4”晶圓尺寸成長至今12”晶圓，在這個需要大量技術和資金的產業裡，每一世代的轉換相對於設備和製程都面臨極大的挑戰。而在半導體的製程中有許多皆約需要熱來做各種製程處理，因此矽晶圓溫度的均勻性，一直影響著各種熱製程和氣相沉積的良率。以自製低壓真空系統來探討影響基板溫度均勻的因素，藉由改變參數(a)製程腔體的操作壓力、(b)製程氣體的流量、(c)反應器的進氣高度、(d)矽晶圓和反應器平行高度，來交叉比對彼此之間的關聯性。從實驗結果得出，如反應器的噴氣口未與基板產生氣體擴散反應，即使改變其它機構或參數，皆對基板溫度無太大變化，因帶有溫度的氣體分子為未通過晶片表面，無法達到溫度傳遞的效果，但並非反應器和使基板平行即可得到較佳均溫，因製程氣體流量也是一個變數需要考慮重點。基板溫度均勻性有許多參數互相交叉影響，並非單純從單一機構改良或參數修正即可改變，要依不同的製程做參數搭配和硬體修正，才能求得較佳的均溫區。 As technologies advance, nano-size wires can be applied to semiconductors. From the 4-inch wafer manufacturing in the early age to the burgeoning 12-inch wafer production today, every transition to the next generation poses a great challenge to both equipment and processing for the industry that demands tremendous input of technologies and funding. Since heat is used in many processing stages of semiconductor production, temperature evenness of silicon wafer has always been a crucial factor in determining the yield rate of thermal processing and vapor deposition. This study attempts to analyze the factors affecting temperature evenness of server board by means of a self-made low-pressure vacuum system altering the following configurations (a) operating pressure inside process chamber; (b) process gas flow; (c) air-inlet altitude of reactor; and (d) parallel altitude between silicon wafer and reactor. The correlations are examined through cross validation and the result shows that: if gas diffusion does not occur between the shower and server board, the temperature of server board will remain rather stable although other mechanisms or configurations are altered. The reason behind this is that gas molecules do not pass the wafer surface and thus fail to transfer heat onto it. However, it is not the case that better temperature evenness can be achieved if reactor and server board are arranged at a parallel altitude, because process gas flow is also a crucial variable. In summery, various configurations collectively produce a cross impact on temperature evenness of server board. Therefore, in order to gain a more ideal uniform temperature zone, configuration combination and equipment adjustment shall be done for each processing, instead of altering individual mechanisms or configurations.

低壓真空系統基板溫度差異分析 = Temperature difference of substrate in Low Pressure Vacuum System
李, 文正

低壓真空系統基板溫度差異分析 = Temperature difference of substrate in Low Pressure Vacuum System / 李文正撰 - 初版. - 雲林縣 : 國立虎尾科技大學, 民97[2008]. - 51面 ; 圖,表 ; 30公分.
溫度Temperature

莊, 賦祥

低壓真空系統基板溫度差異分析 = Temperature difference of substrate in Low Pressure Vacuum System
LDR:03995nam0 2200253 450 001 549422
010 0 $b 平裝
100 $a 20090421h akaa0chia50020302ba
101 0 $a chi
102 $a tw
105 $a ak am 000yy
200 1 $a 低壓真空系統基板溫度差異分析 $d Temperature difference of substrate in Low Pressure Vacuum System $f 李文正撰
205 $a 初版
210 $a 雲林縣 $d 民97[2008] $c 國立虎尾科技大學
215 0 $a 51面 $c 圖,表 $d 30公分
314 $a 指導教授：莊賦祥
328 $a 碩士論文--國立虎尾科技大學光電與材料科技研究所
330 $a 隨著科技進步，半導體線徑奈米化，從早期4”晶圓尺寸成長至今12”晶圓，在這個需要大量技術和資金的產業裡，每一世代的轉換相對於設備和製程都面臨極大的挑戰。而在半導體的製程中有許多皆約需要熱來做各種製程處理，因此矽晶圓溫度的均勻性，一直影響著各種熱製程和氣相沉積的良率。以自製低壓真空系統來探討影響基板溫度均勻的因素，藉由改變參數(a)製程腔體的操作壓力、(b)製程氣體的流量、(c)反應器的進氣高度、(d)矽晶圓和反應器平行高度，來交叉比對彼此之間的關聯性。從實驗結果得出，如反應器的噴氣口未與基板產生氣體擴散反應，即使改變其它機構或參數，皆對基板溫度無太大變化，因帶有溫度的氣體分子為未通過晶片表面，無法達到溫度傳遞的效果，但並非反應器和使基板平行即可得到較佳均溫，因製程氣體流量也是一個變數需要考慮重點。基板溫度均勻性有許多參數互相交叉影響，並非單純從單一機構改良或參數修正即可改變，要依不同的製程做參數搭配和硬體修正，才能求得較佳的均溫區。 As technologies advance, nano-size wires can be applied to semiconductors. From the 4-inch wafer manufacturing in the early age to the burgeoning 12-inch wafer production today, every transition to the next generation poses a great challenge to both equipment and processing for the industry that demands tremendous input of technologies and funding. Since heat is used in many processing stages of semiconductor production, temperature evenness of silicon wafer has always been a crucial factor in determining the yield rate of thermal processing and vapor deposition. This study attempts to analyze the factors affecting temperature evenness of server board by means of a self-made low-pressure vacuum system altering the following configurations (a) operating pressure inside process chamber; (b) process gas flow; (c) air-inlet altitude of reactor; and (d) parallel altitude between silicon wafer and reactor. The correlations are examined through cross validation and the result shows that: if gas diffusion does not occur between the shower and server board, the temperature of server board will remain rather stable although other mechanisms or configurations are altered. The reason behind this is that gas molecules do not pass the wafer surface and thus fail to transfer heat onto it. However, it is not the case that better temperature evenness can be achieved if reactor and server board are arranged at a parallel altitude, because process gas flow is also a crucial variable. In summery, various configurations collectively produce a cross impact on temperature evenness of server board. Therefore, in order to gain a more ideal uniform temperature zone, configuration combination and equipment adjustment shall be done for each processing, instead of altering individual mechanisms or configurations.
510 1 $a Temperature difference of substrate in Low Pressure Vacuum System
610 0 $a 溫度 $a 真空
610 1 $a Temperature $a vacuum
681 $a 008.166M $b 4001
700 $a 李 $b 文正 $3 539754
702 $a 莊 $b 賦祥 $3 487566
712 $a 國立虎尾科技大學 $b 工業工程與管理究所 $3 523742
770 $a Wen-Cheng Lee $3 586884
772 $a Fuh-Shyang Juang $3 538197
801 0 $a tw $b 虎尾科技大學 $c 20081111 $g CCR
801 2 $a tw $b 虎尾科技大學 $c 20090421 $g CCR
856 7 $2 http $u http://140.130.12.251/ETD-db/ETD-search-c/view_etd?URN=etd-0221108-111508