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氣體阻障層製備於具有連續沉積-蝕刻有機矽基覆蓋之圖案化表面之研究 = ...

陳順祺

氣體阻障層製備於具有連續沉積-蝕刻有機矽基覆蓋之圖案化表面之研究 = = A Study on the Preparation of a Gas Barrier Coated on Patterned Surface Coveraged by Organosilicon Film Using Consecutive Deposition-Etching Process /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	氣體阻障層製備於具有連續沉積-蝕刻有機矽基覆蓋之圖案化表面之研究 = / 陳順祺撰.
其他題名:	A Study on the Preparation of a Gas Barrier Coated on Patterned Surface Coveraged by Organosilicon Film Using Consecutive Deposition-Etching Process /
其他題名:	A Study on the Preparation of a Gas Barrier Coated on Patterned Surface Coveraged by Organosilicon Film Using Consecutive Deposition-Etching Process.
作者:	陳順祺
出版者:	雲林縣 : 國立虎尾科技大學 , : 民105.07.,
面頁冊數:	[10], 87面 : 圖, 表 ; : 30公分.;
附註:	指導教授：劉代山.
標題:	有機矽基薄膜. -
電子資源:	http://cetd.lib.nfu.edu.tw/etdservice/view_metadata?etdun=U0028-0908201614285000

氣體阻障層製備於具有連續沉積-蝕刻有機矽基覆蓋之圖案化表面之研究 = = A Study on the Preparation of a Gas Barrier Coated on Patterned Surface Coveraged by Organosilicon Film Using Consecutive Deposition-Etching Process /
陳順祺

氣體阻障層製備於具有連續沉積-蝕刻有機矽基覆蓋之圖案化表面之研究 = A Study on the Preparation of a Gas Barrier Coated on Patterned Surface Coveraged by Organosilicon Film Using Consecutive Deposition-Etching Process / A Study on the Preparation of a Gas Barrier Coated on Patterned Surface Coveraged by Organosilicon Film Using Consecutive Deposition-Etching Process.陳順祺撰. - 初版. - 雲林縣 : 國立虎尾科技大學 , 民105.07. - [10], 87面 : 圖, 表 ; 30公分.

指導教授：劉代山.

含參考書目.Subjects--Topical Terms:

1086398
有機矽基薄膜.

氣體阻障層製備於具有連續沉積-蝕刻有機矽基覆蓋之圖案化表面之研究 = = A Study on the Preparation of a Gas Barrier Coated on Patterned Surface Coveraged by Organosilicon Film Using Consecutive Deposition-Etching Process /
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246 3 1 $a A Study on the Preparation of a Gas Barrier Coated on Patterned Surface Coveraged by Organosilicon Film Using Consecutive Deposition-Etching Process.
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504 $a 含參考書目.
650 # 4 $a 有機矽基薄膜. $3 1086398
650 # 4 $a 無機氮氧化矽. $3 1086397
650 # 4 $a 電漿增強化學氣相沉積. $3 996092
650 # 4 $a 水氣滲透率. $3 996118
650 # 4 $a 階梯覆蓋性. $3 1086396
650 # 4 $a 底切圖案化. $3 1086395
650 # 4 $a 頂切圖案化. $3 1086394
650 # 4 $a 電漿蝕刻. $3 1086393
650 # 4 $a organosilicon. $3 1086392
650 # 4 $a inorganic silicon oxynitride. $3 1086391
650 # 4 $a plasma enhanced chemical vapor deposition. $3 1086390
650 # 4 $a water vapor permeability. $3 1086389
650 # 4 $a step coverage. $3 1045680
650 # 4 $a under-cut patterned. $3 1086388
650 # 4 $a over-cut patterned. $3 1086387
650 # 4 $a plasma etching. $3 1086386
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