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3D TCAD simulation for CMOS nanoelet...

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Jhan, Yi-Ruei.

3D TCAD simulation for CMOS nanoeletronic devices /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	3D TCAD simulation for CMOS nanoeletronic devices // Yung-Chun Wu, Yi-Ruei Jhan.
Author:	Wu, Yung-Chun.
other author:	Jhan, Yi-Ruei.
Published:	Singapore :Springer, : c2018.,
Description:	xiii, 330 p. :ill. (some col.) ; : 24 cm.;
Subject:	Metal oxide semiconductors, Complementary - Computer-aided design. -
ISBN:	9789811030659 (cloth) :

3D TCAD simulation for CMOS nanoeletronic devices /
Wu, Yung-Chun.

3D TCAD simulation for CMOS nanoeletronic devices /Yung-Chun Wu, Yi-Ruei Jhan. - Singapore :Springer,c2018. - xiii, 330 p. :ill. (some col.) ;24 cm.

Includes bibliographical references.

ISBN: 9789811030659 (cloth) :NT3280Subjects--Topical Terms:

561270
Metal oxide semiconductors, Complementary
--Computer-aided design.

LC Class. No.: TK7871.99.M44

Dewey Class. No.: 621.3815/2

3D TCAD simulation for CMOS nanoeletronic devices /
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020 $a 9789811030659 (cloth) : $c NT3280
020 $z 9789811030666 (ebk.)
035 $a (OCoLC)992118534 $z (OCoLC)1005134338 $z (OCoLC)1011794247
035 $a ocn992118534
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050 # 4 $a TK7871.99.M44
082 0 4 $a 621.3815/2 $2 23
100 1 $a Wu, Yung-Chun. $3 1139085
245 1 0 $a 3D TCAD simulation for CMOS nanoeletronic devices / $c Yung-Chun Wu, Yi-Ruei Jhan.
260 # $a Singapore : $b Springer, $c c2018.
300 $a xiii, 330 p. : $b ill. (some col.) ; $c 24 cm.
504 $a Includes bibliographical references.
650 # 0 $a Metal oxide semiconductors, Complementary $x Computer-aided design. $3 561270
700 1 # $a Jhan, Yi-Ruei. $3 1139086

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621.38152 W959 2018

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