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Semiconductor Power Devices = Physics, Characteristics, Reliability /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Semiconductor Power Devices/ by Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker.
Reminder of title:	Physics, Characteristics, Reliability /
Author:	Lutz, Josef.
other author:	Schlangenotto, Heinrich.
Description:	XIX, 714 p.online resource. :
Contained By:	Springer Nature eBook
Subject:	Electronic circuits. -
Online resource:	https://doi.org/10.1007/978-3-319-70917-8
ISBN:	9783319709178

Semiconductor Power Devices = Physics, Characteristics, Reliability /
Lutz, Josef.

Semiconductor Power DevicesPhysics, Characteristics, Reliability /[electronic resource] :by Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker. - 2nd ed. 2018. - XIX, 714 p.online resource.

Power Semiconductor Devices – Key Components for Efficient Electrical Energy Conversion Systems -- Semiconductor Properties -- pn-Junctions -- Short Introduction to Power Device Technology -- pin-Diodes -- Schottky Diodes -- Bipolar Transistors -- Thyristors -- MOS Transistors -- IGBTs -- Packaging and Reliability of Power Devices -- Destructive Mechanisms in Power Devices -- Power Device-Induced Oscillations and Electromagnetic Disturbances -- Power Electronic System Integration.

This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.

ISBN: 9783319709178

Standard No.: 10.1007/978-3-319-70917-8doiSubjects--Topical Terms:

563332
Electronic circuits.

LC Class. No.: TK7888.4

Dewey Class. No.: 621.3815

Semiconductor Power Devices = Physics, Characteristics, Reliability /
LDR:02822nam a22003975i 4500 001 995968
003 DE-He213
005 20200630003831.0
007 cr nn 008mamaa
008 201225s2018 gw | s |||| 0|eng d
020 $a 9783319709178 $9 978-3-319-70917-8
024 7 $a 10.1007/978-3-319-70917-8 $2 doi
035 $a 978-3-319-70917-8
050 4 $a TK7888.4
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
072 7 $a TJFC $2 thema
082 0 4 $a 621.3815 $2 23
100 1 $a Lutz, Josef. $4 aut $4 http://id.loc.gov/vocabulary/relators/aut $3 784135
245 1 0 $a Semiconductor Power Devices $h [electronic resource] : $b Physics, Characteristics, Reliability / $c by Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker.
250 $a 2nd ed. 2018.
264 1 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2018.
300 $a XIX, 714 p. $b online resource.
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
347 $a text file $b PDF $2 rda
505 0 $a Power Semiconductor Devices – Key Components for Efficient Electrical Energy Conversion Systems -- Semiconductor Properties -- pn-Junctions -- Short Introduction to Power Device Technology -- pin-Diodes -- Schottky Diodes -- Bipolar Transistors -- Thyristors -- MOS Transistors -- IGBTs -- Packaging and Reliability of Power Devices -- Destructive Mechanisms in Power Devices -- Power Device-Induced Oscillations and Electromagnetic Disturbances -- Power Electronic System Integration.
520 $a This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.
650 0 $a Electronic circuits. $3 563332
650 0 $a Power electronics. $3 561011
650 0 $a Energy systems. $3 1253529
650 0 $a Electronics. $3 596389
650 0 $a Microelectronics. $3 554956
650 1 4 $a Circuits and Systems. $3 670901
650 2 4 $a Power Electronics, Electrical Machines and Networks. $3 768690
650 2 4 $a Energy Systems. $3 785876
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 670219
700 1 $a Schlangenotto, Heinrich. $e author. $4 aut $4 http://id.loc.gov/vocabulary/relators/aut $3 1287096
700 1 $a Scheuermann, Uwe. $e author. $4 aut $4 http://id.loc.gov/vocabulary/relators/aut $3 1287097
700 1 $a De Doncker, Rik. $4 aut $4 http://id.loc.gov/vocabulary/relators/aut $3 782998
710 2 $a SpringerLink (Online service) $3 593884
773 0 $t Springer Nature eBook
776 0 8 $i Printed edition: $z 9783319709161
776 0 8 $i Printed edition: $z 9783319709185
776 0 8 $i Printed edition: $z 9783319890111
856 4 0 $u https://doi.org/10.1007/978-3-319-70917-8
912 $a ZDB-2-ENG
912 $a ZDB-2-SXE
950 $a Engineering (SpringerNature-11647)
950 $a Engineering (R0) (SpringerNature-43712)