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3D TCAD Simulation for CMOS Nanoeletronic Devices

Record Type:	Language materials, printed : Monograph/item
Title/Author:	3D TCAD Simulation for CMOS Nanoeletronic Devices/ by Yung-Chun Wu, Yi-Ruei Jhan.
Author:	Wu, Yung-Chun.
other author:	Jhan, Yi-Ruei.
Description:	XIII, 330 p. 243 illus., 240 illus. in color.online resource. :
Contained By:	Springer Nature eBook
Subject:	Electronics. -
Online resource:	https://doi.org/10.1007/978-981-10-3066-6
ISBN:	9789811030666

3D TCAD Simulation for CMOS Nanoeletronic Devices
Wu, Yung-Chun.

3D TCAD Simulation for CMOS Nanoeletronic Devices[electronic resource] /by Yung-Chun Wu, Yi-Ruei Jhan. - 1st ed. 2018. - XIII, 330 p. 243 illus., 240 illus. in color.online resource.

Introduction of Synopsys Sentaurus TCAD 2014 version software environment operation interface and tools -- Simulation analysis of 2D MOSFET -- Simulation analysis of 3D FinFET with LG = 15 nm -- Simulation analysis of Inverter and SRAM of 3D FinFET with LG = 15 nm -- Simulation analysis of GAA NWFET -- Simulation analysis of Junctionless FET with LG = 10 nm -- Simulation analysis of Tunnel FET -- Simulation analysis of Si and Ge 3D FinFET with LG = 3 nm.

This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal–oxide–semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal–oxide–semiconductor field-effect transistor) nanoelectronic devices. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.

ISBN: 9789811030666

Standard No.: 10.1007/978-981-10-3066-6doiSubjects--Topical Terms:

596389
Electronics.

LC Class. No.: TK7800-8360

Dewey Class. No.: 621.381

3D TCAD Simulation for CMOS Nanoeletronic Devices
LDR:03252nam a22004095i 4500 001 999317
003 DE-He213
005 20200705015042.0
007 cr nn 008mamaa
008 201225s2018 si | s |||| 0|eng d
020 $a 9789811030666 $9 978-981-10-3066-6
024 7 $a 10.1007/978-981-10-3066-6 $2 doi
035 $a 978-981-10-3066-6
050 4 $a TK7800-8360
050 4 $a TK7874-7874.9
072 7 $a TJF $2 bicssc
072 7 $a TEC008000 $2 bisacsh
072 7 $a TJF $2 thema
082 0 4 $a 621.381 $2 23
100 1 $a Wu, Yung-Chun. $4 aut $4 http://id.loc.gov/vocabulary/relators/aut $3 1139085
245 1 0 $a 3D TCAD Simulation for CMOS Nanoeletronic Devices $h [electronic resource] / $c by Yung-Chun Wu, Yi-Ruei Jhan.
250 $a 1st ed. 2018.
264 1 $a Singapore : $b Springer Singapore : $b Imprint: Springer, $c 2018.
300 $a XIII, 330 p. 243 illus., 240 illus. in color. $b online resource.
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
347 $a text file $b PDF $2 rda
505 0 $a Introduction of Synopsys Sentaurus TCAD 2014 version software environment operation interface and tools -- Simulation analysis of 2D MOSFET -- Simulation analysis of 3D FinFET with LG = 15 nm -- Simulation analysis of Inverter and SRAM of 3D FinFET with LG = 15 nm -- Simulation analysis of GAA NWFET -- Simulation analysis of Junctionless FET with LG = 10 nm -- Simulation analysis of Tunnel FET -- Simulation analysis of Si and Ge 3D FinFET with LG = 3 nm.
520 $a This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal–oxide–semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal–oxide–semiconductor field-effect transistor) nanoelectronic devices. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.
650 0 $a Electronics. $3 596389
650 0 $a Microelectronics. $3 554956
650 0 $a Semiconductors. $3 578843
650 0 $a Nanotechnology. $3 557660
650 0 $a Industrial engineering. $3 679492
650 0 $a Production engineering. $3 566269
650 1 4 $a Electronics and Microelectronics, Instrumentation. $3 670219
650 2 4 $a Nanotechnology and Microengineering. $3 722030
650 2 4 $a Industrial and Production Engineering. $3 593943
700 1 $a Jhan, Yi-Ruei. $4 aut $4 http://id.loc.gov/vocabulary/relators/aut $3 1139086
710 2 $a SpringerLink (Online service) $3 593884
773 0 $t Springer Nature eBook
776 0 8 $i Printed edition: $z 9789811030659
776 0 8 $i Printed edition: $z 9789811030673
776 0 8 $i Printed edition: $z 9789811097799
856 4 0 $u https://doi.org/10.1007/978-981-10-3066-6
912 $a ZDB-2-ENG
912 $a ZDB-2-SXE
950 $a Engineering (SpringerNature-11647)
950 $a Engineering (R0) (SpringerNature-43712)