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Modeling and parameter extraction techniques of silicon-based radio frequency devices /
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
Modeling and parameter extraction techniques of silicon-based radio frequency devices // Ao Zhang, Jianjun Gao.
作者:
Zhang, Ao,
其他作者:
Gao, Jianjun,
出版者:
Singapore ;World Scientific Publishing Co. Pte. Ltd., : c2023.,
面頁冊數:
xvi, 305 p. :ill., charts ; : 24 cm.;
標題:
Radio frequency integrated circuits - Simulation methods. -
ISBN:
9789811255359 (cloth) :
Modeling and parameter extraction techniques of silicon-based radio frequency devices /
Zhang, Ao,1995-
Modeling and parameter extraction techniques of silicon-based radio frequency devices /
Ao Zhang, Jianjun Gao. - Singapore ;World Scientific Publishing Co. Pte. Ltd.,c2023. - xvi, 305 p. :ill., charts ;24 cm.
Includes bibliographical references and index.
"This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods. The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design"--
ISBN: 9789811255359 (cloth) :NT4211
LCCN: 2022036005
Nat. Bib. No.: GBC326777bnb
Nat. Bib. Agency Control No.: 020951623UkSubjects--Topical Terms:
1437950
Radio frequency integrated circuits
--Simulation methods.
LC Class. No.: TK7874.78 / .Z49 2023
Dewey Class. No.: 621.3841/2
Modeling and parameter extraction techniques of silicon-based radio frequency devices /
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