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Modeling and parameter extraction techniques of silicon-based radio frequency devices /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Modeling and parameter extraction techniques of silicon-based radio frequency devices // Ao Zhang, Jianjun Gao.
Author:	Zhang, Ao,
other author:	Gao, Jianjun,
Published:	Singapore ;World Scientific Publishing Co. Pte. Ltd., : c2023.,
Description:	xvi, 305 p. :ill., charts ; : 24 cm.;
Subject:	Radio frequency integrated circuits - Simulation methods. -
ISBN:	9789811255359 (cloth) :

Modeling and parameter extraction techniques of silicon-based radio frequency devices /
Zhang, Ao,1995-

Modeling and parameter extraction techniques of silicon-based radio frequency devices /Ao Zhang, Jianjun Gao. - Singapore ;World Scientific Publishing Co. Pte. Ltd.,c2023. - xvi, 305 p. :ill., charts ;24 cm.

Includes bibliographical references and index.

"This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods. The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design"--

ISBN: 9789811255359 (cloth) :NT4211

LCCN: 2022036005

Nat. Bib. No.: GBC326777bnb

Nat. Bib. Agency Control No.: 020951623UkSubjects--Topical Terms:

1437950
Radio frequency integrated circuits
--Simulation methods.

LC Class. No.: TK7874.78 / .Z49 2023

Dewey Class. No.: 621.3841/2

Modeling and parameter extraction techniques of silicon-based radio frequency devices /
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020 $a 9789811255359 (cloth) : $c NT4211
020 $a 9811255350 (cloth)
020 $z 9789811255366 (ebook for institutions)
020 $z 9789811255373 (ebook for individuals)
035 $a (OCoLC)1296408686 $z (OCoLC)1296265312 $z (OCoLC)1296418658 $z (OCoLC)1370600425
035 $a on1296408686
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050 0 0 $a TK7874.78 $b .Z49 2023
082 0 0 $a 621.3841/2 $2 23
100 1 $a Zhang, Ao, $d 1995- $e author. $3 1437949
245 1 0 $a Modeling and parameter extraction techniques of silicon-based radio frequency devices / $c Ao Zhang, Jianjun Gao.
260 # $a Singapore ; $a Hackensack, NJ : $b World Scientific Publishing Co. Pte. Ltd., $c c2023.
300 $a xvi, 305 p. : $b ill., charts ; $c 24 cm.
504 $a Includes bibliographical references and index.
520 # $a "This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods. The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design"-- $c Provided by publisher.
650 # 0 $a Radio frequency integrated circuits $x Simulation methods. $3 1437950
700 1 # $a Gao, Jianjun, $d 1968- $3 840930