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Compound semiconductor materials and...

Huang, Tongde,

Compound semiconductor materials and devices

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Compound semiconductor materials and devices/ Zhaojun Liu, Tongde Huang, Qiang Li, Xing Lu, Xinbo Zou.
Author:	Liu, Zhaojun.
other author:	Huang, Tongde,
Published:	San Rafael, California :Morgan & Claypool Publisher, : 2016.,
Description:	1 online resource (75 p.)
Subject:	Compound semiconductors. -
Online resource:	click for full text
ISBN:	9781627058520

Compound semiconductor materials and devices
Liu, Zhaojun.

Compound semiconductor materials and devices[electronic resource] /Zhaojun Liu, Tongde Huang, Qiang Li, Xing Lu, Xinbo Zou. - San Rafael, California :Morgan & Claypool Publisher,2016. - 1 online resource (75 p.)

Includes bibliographical references and index.

Compound semiconductor materials and devices -- Abstract -- Contents -- Chapter 1. Introduction -- Chapter 2. GaN-based HEMTs and MOSHEMTs -- Chapter 3. III-V Materials and Devices -- Chapter 4. Summary -- References -- Authors' Biographies.

Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials.

ISBN: 9781627058520Subjects--Topical Terms:

568176
Compound semiconductors.

LC Class. No.: TK7871.99.C65

Dewey Class. No.: 621.38152

Compound semiconductor materials and devices
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007 cr cn|||||||||
008 201225s2016 cau ob 000 0 eng d
020 $a 9781627058520
020 $a 9781627058537
035 $a MCPB0000898
040 $a iG Publishing $b eng $e aacr2 $c iG Publishing
041 0 $a eng
050 0 0 $a TK7871.99.C65
082 0 4 $a 621.38152
100 1 $a Liu, Zhaojun. $3 1293486
245 1 0 $a Compound semiconductor materials and devices $h [electronic resource] / $c Zhaojun Liu, Tongde Huang, Qiang Li, Xing Lu, Xinbo Zou.
260 $a San Rafael, California : $b Morgan & Claypool Publisher, $c 2016.
300 $a 1 online resource (75 p.)
504 $a Includes bibliographical references and index.
505 0 $a Compound semiconductor materials and devices -- Abstract -- Contents -- Chapter 1. Introduction -- Chapter 2. GaN-based HEMTs and MOSHEMTs -- Chapter 3. III-V Materials and Devices -- Chapter 4. Summary -- References -- Authors' Biographies.
520 3 $a Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials.
650 0 $a Compound semiconductors. $3 568176
650 0 $a Modulation-doped field-effect transistors. $3 1293491
700 1 $a Huang, Tongde, $e author. $3 1293487
700 1 $a Li, Qiang, $e author. $3 1293488
700 1 $a Lu, Xing, $e author. $3 1293489
700 1 $a Zou, Xinbo, $e author. $3 1293490
856 4 0 $u http://portal.igpublish.com/iglibrary/search/MCPB0000898.html $z click for full text

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