Language:
English
繁體中文
Help
Login
Back
Switch To:
Labeled
|
MARC Mode
|
ISBD
Device Physics, Modeling, Technology...
~
Amiri, Iraj Sadegh.
Device Physics, Modeling, Technology, and Analysis for Silicon MESFET
Record Type:
Language materials, printed : Monograph/item
Title/Author:
Device Physics, Modeling, Technology, and Analysis for Silicon MESFET/ by Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry.
Author:
Amiri, Iraj Sadegh.
other author:
Mohammadi, Hossein.
Description:
IX, 122 p. 51 illus., 27 illus. in color.online resource. :
Contained By:
Springer Nature eBook
Subject:
Electronic circuits. -
Online resource:
https://doi.org/10.1007/978-3-030-04513-5
ISBN:
9783030045135
Device Physics, Modeling, Technology, and Analysis for Silicon MESFET
Amiri, Iraj Sadegh.
Device Physics, Modeling, Technology, and Analysis for Silicon MESFET
[electronic resource] /by Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry. - 1st ed. 2019. - IX, 122 p. 51 illus., 27 illus. in color.online resource.
Chapter 1. Invention and Evaluation of Transistors and Integrated Circuits -- Chapter 2. General overview of the basic structure and operation of a typical silicon on insulator metal-semiconductor field effect transistor SOI-MESFET -- Chapter 3. Modeling of Classical SOI-MESFET -- Chapter 4. Design and modeling of triple-material gate SOI-MESFET -- Chapter 5. Three-dimensional analytical model of the non-classical three-gate SOI-MESFET -- Chapter 6. Analytical investigation of subthreshold performance of SOI-MESFET devices -- Chapter 7. Future works on Silicon-on-insulator metal semiconductor field effect transistors (SOI-MESFETs).
This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications. Describes the evolution of MESFET in the semiconductor industry; Discusses challenges and solutions associated with downscaling; Provides comprehensive information on the structure and operation of silicon MESFETs.
ISBN: 9783030045135
Standard No.: 10.1007/978-3-030-04513-5doiSubjects--Topical Terms:
563332
Electronic circuits.
LC Class. No.: TK7888.4
Dewey Class. No.: 621.3815
Device Physics, Modeling, Technology, and Analysis for Silicon MESFET
LDR
:02718nam a22003855i 4500
001
1004283
003
DE-He213
005
20200701071759.0
007
cr nn 008mamaa
008
210106s2019 gw | s |||| 0|eng d
020
$a
9783030045135
$9
978-3-030-04513-5
024
7
$a
10.1007/978-3-030-04513-5
$2
doi
035
$a
978-3-030-04513-5
050
4
$a
TK7888.4
072
7
$a
TJFC
$2
bicssc
072
7
$a
TEC008010
$2
bisacsh
072
7
$a
TJFC
$2
thema
082
0 4
$a
621.3815
$2
23
100
1
$a
Amiri, Iraj Sadegh.
$4
aut
$4
http://id.loc.gov/vocabulary/relators/aut
$3
1062519
245
1 0
$a
Device Physics, Modeling, Technology, and Analysis for Silicon MESFET
$h
[electronic resource] /
$c
by Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry.
250
$a
1st ed. 2019.
264
1
$a
Cham :
$b
Springer International Publishing :
$b
Imprint: Springer,
$c
2019.
300
$a
IX, 122 p. 51 illus., 27 illus. in color.
$b
online resource.
336
$a
text
$b
txt
$2
rdacontent
337
$a
computer
$b
c
$2
rdamedia
338
$a
online resource
$b
cr
$2
rdacarrier
347
$a
text file
$b
PDF
$2
rda
505
0
$a
Chapter 1. Invention and Evaluation of Transistors and Integrated Circuits -- Chapter 2. General overview of the basic structure and operation of a typical silicon on insulator metal-semiconductor field effect transistor SOI-MESFET -- Chapter 3. Modeling of Classical SOI-MESFET -- Chapter 4. Design and modeling of triple-material gate SOI-MESFET -- Chapter 5. Three-dimensional analytical model of the non-classical three-gate SOI-MESFET -- Chapter 6. Analytical investigation of subthreshold performance of SOI-MESFET devices -- Chapter 7. Future works on Silicon-on-insulator metal semiconductor field effect transistors (SOI-MESFETs).
520
$a
This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications. Describes the evolution of MESFET in the semiconductor industry; Discusses challenges and solutions associated with downscaling; Provides comprehensive information on the structure and operation of silicon MESFETs.
650
0
$a
Electronic circuits.
$3
563332
650
0
$a
Electronics.
$3
596389
650
0
$a
Microelectronics.
$3
554956
650
1 4
$a
Circuits and Systems.
$3
670901
650
2 4
$a
Electronic Circuits and Devices.
$3
782968
650
2 4
$a
Electronics and Microelectronics, Instrumentation.
$3
670219
700
1
$a
Mohammadi, Hossein.
$e
author.
$4
aut
$4
http://id.loc.gov/vocabulary/relators/aut
$3
1297717
700
1
$a
Hosseinghadiry, Mahdiar.
$e
author.
$4
aut
$4
http://id.loc.gov/vocabulary/relators/aut
$3
1297718
710
2
$a
SpringerLink (Online service)
$3
593884
773
0
$t
Springer Nature eBook
776
0 8
$i
Printed edition:
$z
9783030045128
776
0 8
$i
Printed edition:
$z
9783030045142
856
4 0
$u
https://doi.org/10.1007/978-3-030-04513-5
912
$a
ZDB-2-ENG
912
$a
ZDB-2-SXE
950
$a
Engineering (SpringerNature-11647)
950
$a
Engineering (R0) (SpringerNature-43712)
based on 0 review(s)
Multimedia
Reviews
Add a review
and share your thoughts with other readers
Export
pickup library
Processing
...
Change password
Login