語系:
繁體中文
English
說明(常見問題)
登入
回首頁
切換:
標籤
|
MARC模式
|
ISBD
Electronic States of Narrow-Gap Semi...
~
Akiba, Kazuto.
Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions/ by Kazuto Akiba.
作者:
Akiba, Kazuto.
面頁冊數:
XXIV, 147 p. 91 illus., 56 illus. in color.online resource. :
Contained By:
Springer Nature eBook
標題:
Semiconductors. -
電子資源:
https://doi.org/10.1007/978-981-13-7107-3
ISBN:
9789811371073
Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions
Akiba, Kazuto.
Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions
[electronic resource] /by Kazuto Akiba. - 1st ed. 2019. - XXIV, 147 p. 91 illus., 56 illus. in color.online resource. - Springer Theses, Recognizing Outstanding Ph.D. Research,2190-5053. - Springer Theses, Recognizing Outstanding Ph.D. Research,.
General Introduction -- Experimental Methods -- Black Phosphorus -- Lead Telluride -- Concluding Remarks.
This book discusses the latest investigations into the electronic structure of narrow-gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurement using two high-quality single crystals: black phosphorus (BP) and lead telluride (PbTe). The book presents two significant findings for BP and PbTe. The first is the successful demonstration of the pressure-induced transition from semiconductor to semimetal in the electronic structure of BP using magnetoresistance measurements. The second is the quantitative estimation of how well the Dirac fermion description works for electronic properties in PbTe. The overviews on BP and PbTe from the point of view of material properties help readers quickly learn typical electronic characters of narrow-gap semiconductor materials, which have recently attract interest in topological features in condensed matter physics. Additionally the introductory review of the principles and methodology allows readers to easily understand the high magnetic field and pressure experiments.
ISBN: 9789811371073
Standard No.: 10.1007/978-981-13-7107-3doiSubjects--Topical Terms:
578843
Semiconductors.
LC Class. No.: QC610.9-611.8
Dewey Class. No.: 537.622
Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions
LDR
:02625nam a22004095i 4500
001
1005917
003
DE-He213
005
20200629122511.0
007
cr nn 008mamaa
008
210106s2019 si | s |||| 0|eng d
020
$a
9789811371073
$9
978-981-13-7107-3
024
7
$a
10.1007/978-981-13-7107-3
$2
doi
035
$a
978-981-13-7107-3
050
4
$a
QC610.9-611.8
072
7
$a
TJFD5
$2
bicssc
072
7
$a
TEC008090
$2
bisacsh
072
7
$a
TJFD
$2
thema
082
0 4
$a
537.622
$2
23
100
1
$a
Akiba, Kazuto.
$e
author.
$4
aut
$4
http://id.loc.gov/vocabulary/relators/aut
$3
1299380
245
1 0
$a
Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions
$h
[electronic resource] /
$c
by Kazuto Akiba.
250
$a
1st ed. 2019.
264
1
$a
Singapore :
$b
Springer Singapore :
$b
Imprint: Springer,
$c
2019.
300
$a
XXIV, 147 p. 91 illus., 56 illus. in color.
$b
online resource.
336
$a
text
$b
txt
$2
rdacontent
337
$a
computer
$b
c
$2
rdamedia
338
$a
online resource
$b
cr
$2
rdacarrier
347
$a
text file
$b
PDF
$2
rda
490
1
$a
Springer Theses, Recognizing Outstanding Ph.D. Research,
$x
2190-5053
505
0
$a
General Introduction -- Experimental Methods -- Black Phosphorus -- Lead Telluride -- Concluding Remarks.
520
$a
This book discusses the latest investigations into the electronic structure of narrow-gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurement using two high-quality single crystals: black phosphorus (BP) and lead telluride (PbTe). The book presents two significant findings for BP and PbTe. The first is the successful demonstration of the pressure-induced transition from semiconductor to semimetal in the electronic structure of BP using magnetoresistance measurements. The second is the quantitative estimation of how well the Dirac fermion description works for electronic properties in PbTe. The overviews on BP and PbTe from the point of view of material properties help readers quickly learn typical electronic characters of narrow-gap semiconductor materials, which have recently attract interest in topological features in condensed matter physics. Additionally the introductory review of the principles and methodology allows readers to easily understand the high magnetic field and pressure experiments.
650
0
$a
Semiconductors.
$3
578843
650
0
$a
Optical materials.
$3
672695
650
0
$a
Electronic materials.
$3
1253592
650
0
$a
Surfaces (Physics).
$3
716359
650
0
$a
Interfaces (Physical sciences).
$3
795468
650
0
$a
Thin films.
$3
560219
650
0
$a
Materials science.
$3
557839
650
0
$a
Solid state physics.
$3
641431
650
2 4
$a
Optical and Electronic Materials.
$3
593919
650
2 4
$a
Surface and Interface Science, Thin Films.
$3
782551
650
2 4
$a
Characterization and Evaluation of Materials.
$3
674449
650
2 4
$a
Solid State Physics.
$3
768851
710
2
$a
SpringerLink (Online service)
$3
593884
773
0
$t
Springer Nature eBook
776
0 8
$i
Printed edition:
$z
9789811371066
776
0 8
$i
Printed edition:
$z
9789811371080
776
0 8
$i
Printed edition:
$z
9789811371097
830
0
$a
Springer Theses, Recognizing Outstanding Ph.D. Research,
$x
2190-5053
$3
1253569
856
4 0
$u
https://doi.org/10.1007/978-981-13-7107-3
912
$a
ZDB-2-PHA
912
$a
ZDB-2-SXP
950
$a
Physics and Astronomy (SpringerNature-11651)
950
$a
Physics and Astronomy (R0) (SpringerNature-43715)
筆 0 讀者評論
多媒體
評論
新增評論
分享你的心得
Export
取書館別
處理中
...
變更密碼[密碼必須為2種組合(英文和數字)及長度為10碼以上]
登入