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Theory of Electronic and Optical Pro...
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Magorrian, Samuel J.
Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide/ by Samuel J. Magorrian.
作者:
Magorrian, Samuel J.
面頁冊數:
XII, 87 p. 32 illus., 26 illus. in color.online resource. :
Contained By:
Springer Nature eBook
標題:
Surfaces (Physics). -
電子資源:
https://doi.org/10.1007/978-3-030-25715-6
ISBN:
9783030257156
Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide
Magorrian, Samuel J.
Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide
[electronic resource] /by Samuel J. Magorrian. - 1st ed. 2019. - XII, 87 p. 32 illus., 26 illus. in color.online resource. - Springer Theses, Recognizing Outstanding Ph.D. Research,2190-5053. - Springer Theses, Recognizing Outstanding Ph.D. Research,.
Part I: Introduction and basics -- Scientific context and motivation -- Laser-plasmas -- Part II: Experimental methods -- High-power lasers -- Transportable Paul trap for isolated micro-targets in vacuum -- Part III: Laser-microplasma interactions -- Laser-driven ion acceleration using isolated micro-sphere targets -- Laser-driven micro-source for bi-modal radiographic imaging -- Part IV: Summary and perspectives -- Summary -- Challenges and perspectives -- Appendix.
This thesis provides the first comprehensive theoretical overview of the electronic and optical properties of two dimensional (2D) Indium Selenide: atomically thin films of InSe ranging from monolayers to few layers in thickness. The thesis shows how the electronic propertes of 2D InSe vary significantly with film thickness, changing from a weakly indirect semiconductor for the monolayer to a direct gap material in the bulk form, with a strong band gap variation with film thickness predicted and recently observed in optical experiments. The proposed theory is based on a specially designed hybrid k.p tight-binding model approach (HkpTB), which uses an intralayer k.p Hamiltonian to describe the InSe monolayer, and tight-binding-like interlayer hopping. Electronic and optical absorption spectra are determined, and a detailed description of subbands of electrons in few-layer films and the influence of spin-orbit coupling is provided. The author shows that the principal optical excitations of InSe films with the thickness from 1 to 15 layers broadly cover the visible spectrum, with the possibility of extending optical functionality into the infrared and THz range using intersubband transitions. .
ISBN: 9783030257156
Standard No.: 10.1007/978-3-030-25715-6doiSubjects--Topical Terms:
716359
Surfaces (Physics).
LC Class. No.: QC176.8.S8
Dewey Class. No.: 530.417
Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide
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