國立虎尾科技大學 |

Multi-run Memory Tests for Pattern Sensitive Faults

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Multi-run Memory Tests for Pattern Sensitive Faults/ by Ireneusz Mrozek.
作者:	Mrozek, Ireneusz.
面頁冊數:	X, 135 p. 34 illus.online resource. :
Contained By:	Springer Nature eBook
標題:	Electronic circuits. -
電子資源:	https://doi.org/10.1007/978-3-319-91204-2
ISBN:	9783319912042

Multi-run Memory Tests for Pattern Sensitive Faults
Mrozek, Ireneusz.

Multi-run Memory Tests for Pattern Sensitive Faults[electronic resource] /by Ireneusz Mrozek. - 1st ed. 2019. - X, 135 p. 34 illus.online resource.

Introduction to digital memory -- Basics of functional RAM testing -- Multi-cell faults -- Controlled random testing -- Multi-run tests based on background changing -- Multi-run tests based on address changing -- Multiple controlled random testing -- Pseudo exhaustive testing based on march tests -- Conclusion.

This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory. The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations. Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process; Presents practical algorithms for design and implementation of efficient multi-run tests; Demonstrates methods verified by analytical and experimental investigations.

ISBN: 9783319912042

Standard No.: 10.1007/978-3-319-91204-2doiSubjects--Topical Terms:

563332
Electronic circuits.

LC Class. No.: TK7888.4

Dewey Class. No.: 621.3815

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