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Gallium Oxide = Materials Properties, Crystal Growth, and Devices /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Gallium Oxide/ edited by Masataka Higashiwaki, Shizuo Fujita.
其他題名:	Materials Properties, Crystal Growth, and Devices /
其他作者:	Fujita, Shizuo.
面頁冊數:	XXVIII, 764 p. 473 illus., 393 illus. in color.online resource. :
Contained By:	Springer Nature eBook
標題:	Surfaces and Interfaces, Thin Films. -
電子資源:	https://doi.org/10.1007/978-3-030-37153-1
ISBN:	9783030371531

Gallium Oxide = Materials Properties, Crystal Growth, and Devices /
Gallium OxideMaterials Properties, Crystal Growth, and Devices /[electronic resource] :edited by Masataka Higashiwaki, Shizuo Fujita. - 1st ed. 2020. - XXVIII, 764 p. 473 illus., 393 illus. in color.online resource. - Springer Series in Materials Science,2930933-033X ;. - Springer Series in Materials Science,200.

Preface -- 1. Introduction (20 pages): General materials properties (polymorphs, bandgap, device application etc) (Roberto Fornari, Univ. of Parma, Italy) -- Part I: Bulk growth (40 pages) -- 2. Czochralski (CZ) (Zbigniew Galazka, IKZ Berlin, Germany) -- 3. Edge-defined film-fed growth (EFG) (Akito Kuramata, Tamura Corp., Japan) -- 4. Vertical Bridgman (Keigo Hoshikawa, Shinshu Univ., Japan) -- 5. Wafer manufacturing (Akito Kuramata, Tamura Corp., Japan) -- Part II: Epitaxial growth (110 pages) -- 6. Plasma-assisted MBE (Growth kinetics) (Oliver Bierwagen, Paul Drude Institute Berlin, Germany) -- 7. Plasma-assisted MBE (Homoepitaxial and heterostructure growth) (Jim Speck, UCSB, USA) -- 8. Ozone MBE (Debdeep Jena, Cornell Univ., USA) -- 9 Pulsed laser deposition (PLD) (Akira Ohtomo, Tokyo Institute of Technology, Japan) -- 10. Homoepitaxial growth of β-Ga2O3 thin films on β-Ga2O3 substrates (Michele Baldini, IKZ Berlin, Germany) -- 11. Heteroepitaxial growth of ε-Ga2O3 on sapphire substrates (Roberto Fornari, Univ. of Parma, Italy) -- 12. Homoepitaxial growth of β-Ga2O3 thin films on β-Ga2O3 substrates (Yoshinao Kumagai, Tokyo Univ. of Agriculture and Technology, Japan) -- 13. Heteroepitaxial growth of α-Ga2O3 and ε-Ga2O3 on sapphire substrates (Yuichi Oshima, NIMS, Japan) -- 14. α-Ga2O3 (Shizuo Fujita, Kyoto Univ., Japan) -- 15. ε-Ga2O3 (Hiroyuki Nishinaka, Kyoto Institute of Technology, Japan) -- 16. Low-pressure Chemical Vapor Deposition (Hongping Zhao, Ohio State Univ., USA) -- Part III: Materials properties (120 pages) -- 17. Theoretical DFB calculation 1 (Chris G. Van de Walle, UCSB, USA) -- 18. Theoretical DFB calculation 2 (Joel Varley, Lawrence Livermore National Laboratory, USA) -- 19. Optical properties (Takeyoshi Onuma, Kogakuin Univ., Japan) -- 20. Phonon properties (Mathias Schubert, Univ. of Nebraska, Lincoln, USA) -- 21. Thermal properties (Tengfei Luo, Univ. of Notre Dame and/or Debdeep Jena, Cornell Univ. USA) -- 22. Structural properties (TEM, X-ray topography) (Osamu Ueda, Kanazawa Institute of Technology and/or Hirotaka Yamaguchi, AIST, Japan) -- 23. Electrical properties (Electron mobility and velocity) (Uttam Singisetti, Univ. at Buffalo, The State Univ. of New York, USA) -- 24. Electrical properties (Leakage current of EFG bulk) (Makoto Kasu, Saga Univ., Japan) -- 25. Annealing effects on electrical properties (Takayoshi Oshima, Saga Univ., Japan) -- 26. Vacancy defects by positron annihilation spectroscopy (Filip Tuomisto, Helsinki University of Technology, Finland) -- 27. Deep-level traps (Steve Ringel, Ohio State Univ., USA) -- 28. Scintillation properties (Takayuki Yanagida, Nara Institute of Science and Technology, Japan) -- Part IV: Devices (110 pages) -- 29. Transistors for wireless applications (Gregg Jessen, Air Force Research Lab., USA) -- 30. Transistors for power and radiation-hard electronics (Man Hoi Wong, NICT, Japan) -- 31. (AlGa)2O3/Ga2O3 HEMT (Siddharth Rajan, Ohio State Univ., USA) -- 32. Nano-membrane Ga2O3 FET (Peide Ye, Purdue Univ., USA) -- 33, Amorphous Ga2O3 TFT (Junghwan Kim, Tokyo Institute of Technology, Japan) -- 34. Vertical Schottky barrier diodes on native substrates (Masataka Higashiwaki, NICT, Japan) -- 35. Free-standing α-Ga2O3 Schottky barrier diodes (T. Shinohe, FLOSFIA, Japan) -- 36. Schottky and n-Ga2O3/p-oxide semiconductor hetero bipolar diodes (Marius Grundmann, Univ. of Leipzig, Germany) -- 37. UV photodiodes (Dong-Sing Wuu, National Chung Hsing Univ., Taiwan) -- 38. High-power InGaN LEDs on Ga2O3 substrates (Akito Kuramata, Tamura Corp., Japan) -- 40. Image sensor (Keitada Mineo, Japan Broadcasting Corp., Japan) -- Index.

This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga₂O₃). Ga₂O₃ has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga₂O₃ is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga₂O₃.

ISBN: 9783030371531

Standard No.: 10.1007/978-3-030-37153-1doiSubjects--Topical Terms:

671207
Surfaces and Interfaces, Thin Films.

LC Class. No.: TA1750-1750.22

Dewey Class. No.: 620.11295

Gallium Oxide = Materials Properties, Crystal Growth, and Devices /
LDR:06097nam a22004215i 4500 001 1017353
003 DE-He213
005 20200702114431.0
007 cr nn 008mamaa
008 210318s2020 gw | s |||| 0|eng d
020 $a 9783030371531 $9 978-3-030-37153-1
024 7 $a 10.1007/978-3-030-37153-1 $2 doi
035 $a 978-3-030-37153-1
050 4 $a TA1750-1750.22
072 7 $a TJFD $2 bicssc
072 7 $a TEC021020 $2 bisacsh
072 7 $a TJFD $2 thema
082 0 4 $a 620.11295 $2 23
082 0 4 $a 620.11297 $2 23
245 1 0 $a Gallium Oxide $h [electronic resource] : $b Materials Properties, Crystal Growth, and Devices / $c edited by Masataka Higashiwaki, Shizuo Fujita.
250 $a 1st ed. 2020.
264 1 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2020.
300 $a XXVIII, 764 p. 473 illus., 393 illus. in color. $b online resource.
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
347 $a text file $b PDF $2 rda
490 1 $a Springer Series in Materials Science, $x 0933-033X ; $v 293
505 0 $a Preface -- 1. Introduction (20 pages): General materials properties (polymorphs, bandgap, device application etc) (Roberto Fornari, Univ. of Parma, Italy) -- Part I: Bulk growth (40 pages) -- 2. Czochralski (CZ) (Zbigniew Galazka, IKZ Berlin, Germany) -- 3. Edge-defined film-fed growth (EFG) (Akito Kuramata, Tamura Corp., Japan) -- 4. Vertical Bridgman (Keigo Hoshikawa, Shinshu Univ., Japan) -- 5. Wafer manufacturing (Akito Kuramata, Tamura Corp., Japan) -- Part II: Epitaxial growth (110 pages) -- 6. Plasma-assisted MBE (Growth kinetics) (Oliver Bierwagen, Paul Drude Institute Berlin, Germany) -- 7. Plasma-assisted MBE (Homoepitaxial and heterostructure growth) (Jim Speck, UCSB, USA) -- 8. Ozone MBE (Debdeep Jena, Cornell Univ., USA) -- 9 Pulsed laser deposition (PLD) (Akira Ohtomo, Tokyo Institute of Technology, Japan) -- 10. Homoepitaxial growth of β-Ga2O3 thin films on β-Ga2O3 substrates (Michele Baldini, IKZ Berlin, Germany) -- 11. Heteroepitaxial growth of ε-Ga2O3 on sapphire substrates (Roberto Fornari, Univ. of Parma, Italy) -- 12. Homoepitaxial growth of β-Ga2O3 thin films on β-Ga2O3 substrates (Yoshinao Kumagai, Tokyo Univ. of Agriculture and Technology, Japan) -- 13. Heteroepitaxial growth of α-Ga2O3 and ε-Ga2O3 on sapphire substrates (Yuichi Oshima, NIMS, Japan) -- 14. α-Ga2O3 (Shizuo Fujita, Kyoto Univ., Japan) -- 15. ε-Ga2O3 (Hiroyuki Nishinaka, Kyoto Institute of Technology, Japan) -- 16. Low-pressure Chemical Vapor Deposition (Hongping Zhao, Ohio State Univ., USA) -- Part III: Materials properties (120 pages) -- 17. Theoretical DFB calculation 1 (Chris G. Van de Walle, UCSB, USA) -- 18. Theoretical DFB calculation 2 (Joel Varley, Lawrence Livermore National Laboratory, USA) -- 19. Optical properties (Takeyoshi Onuma, Kogakuin Univ., Japan) -- 20. Phonon properties (Mathias Schubert, Univ. of Nebraska, Lincoln, USA) -- 21. Thermal properties (Tengfei Luo, Univ. of Notre Dame and/or Debdeep Jena, Cornell Univ. USA) -- 22. Structural properties (TEM, X-ray topography) (Osamu Ueda, Kanazawa Institute of Technology and/or Hirotaka Yamaguchi, AIST, Japan) -- 23. Electrical properties (Electron mobility and velocity) (Uttam Singisetti, Univ. at Buffalo, The State Univ. of New York, USA) -- 24. Electrical properties (Leakage current of EFG bulk) (Makoto Kasu, Saga Univ., Japan) -- 25. Annealing effects on electrical properties (Takayoshi Oshima, Saga Univ., Japan) -- 26. Vacancy defects by positron annihilation spectroscopy (Filip Tuomisto, Helsinki University of Technology, Finland) -- 27. Deep-level traps (Steve Ringel, Ohio State Univ., USA) -- 28. Scintillation properties (Takayuki Yanagida, Nara Institute of Science and Technology, Japan) -- Part IV: Devices (110 pages) -- 29. Transistors for wireless applications (Gregg Jessen, Air Force Research Lab., USA) -- 30. Transistors for power and radiation-hard electronics (Man Hoi Wong, NICT, Japan) -- 31. (AlGa)2O3/Ga2O3 HEMT (Siddharth Rajan, Ohio State Univ., USA) -- 32. Nano-membrane Ga2O3 FET (Peide Ye, Purdue Univ., USA) -- 33, Amorphous Ga2O3 TFT (Junghwan Kim, Tokyo Institute of Technology, Japan) -- 34. Vertical Schottky barrier diodes on native substrates (Masataka Higashiwaki, NICT, Japan) -- 35. Free-standing α-Ga2O3 Schottky barrier diodes (T. Shinohe, FLOSFIA, Japan) -- 36. Schottky and n-Ga2O3/p-oxide semiconductor hetero bipolar diodes (Marius Grundmann, Univ. of Leipzig, Germany) -- 37. UV photodiodes (Dong-Sing Wuu, National Chung Hsing Univ., Taiwan) -- 38. High-power InGaN LEDs on Ga2O3 substrates (Akito Kuramata, Tamura Corp., Japan) -- 40. Image sensor (Keitada Mineo, Japan Broadcasting Corp., Japan) -- Index.
520 $a This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga₂O₃). Ga₂O₃ has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga₂O₃ is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga₂O₃.
650 2 4 $a Surfaces and Interfaces, Thin Films. $3 671207
650 2 4 $a Surface and Interface Science, Thin Films. $3 782551
650 2 4 $a Optics, Lasers, Photonics, Optical Devices. $3 1112289
650 2 4 $a Electrical Engineering. $3 768742
650 1 4 $a Optical and Electronic Materials. $3 593919
650 0 $a Materials—Surfaces. $3 1253588
650 0 $a Thin films. $3 560219
650 0 $a Interfaces (Physical sciences). $3 795468
650 0 $a Surfaces (Physics). $3 716359
650 0 $a Photonics. $3 562392
650 0 $a Lasers. $3 557748
650 0 $a Electrical engineering. $3 596380
650 0 $a Semiconductors. $3 578843
650 0 $a Electronic materials. $3 1253592
650 0 $a Optical materials. $3 672695
700 1 $a Fujita, Shizuo. $e editor. $4 edt $4 http://id.loc.gov/vocabulary/relators/edt $3 1312137
700 1 $a Higashiwaki, Masataka. $e editor. $4 edt $4 http://id.loc.gov/vocabulary/relators/edt $3 1312136
710 2 $a SpringerLink (Online service) $3 593884
773 0 $t Springer Nature eBook
776 0 8 $i Printed edition: $z 9783030371524
776 0 8 $i Printed edition: $z 9783030371548
776 0 8 $i Printed edition: $z 9783030371555
830 0 $a Springer Series in Materials Science, $x 0933-033X ; $v 200 $3 1254755
856 4 0 $u https://doi.org/10.1007/978-3-030-37153-1
912 $a ZDB-2-CMS
912 $a ZDB-2-SXC
950 $a Chemistry and Materials Science (SpringerNature-11644)
950 $a Chemistry and Material Science (R0) (SpringerNature-43709)