國立虎尾科技大學 |

Nanoscale Redox Reaction at Metal/Oxide Interface = A Case Study on Schottky Contact and ReRAM /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Nanoscale Redox Reaction at Metal/Oxide Interface/ by Takahiro Nagata.
其他題名:	A Case Study on Schottky Contact and ReRAM /
作者:	Nagata, Takahiro.
面頁冊數:	XI, 89 p. 63 illus., 51 illus. in color.online resource. :
Contained By:	Springer Nature eBook
標題:	Electronics and Microelectronics, Instrumentation. -
電子資源:	https://doi.org/10.1007/978-4-431-54850-8
ISBN:	9784431548508

Nanoscale Redox Reaction at Metal/Oxide Interface = A Case Study on Schottky Contact and ReRAM /
Nagata, Takahiro.

Nanoscale Redox Reaction at Metal/Oxide InterfaceA Case Study on Schottky Contact and ReRAM /[electronic resource] :by Takahiro Nagata. - 1st ed. 2020. - XI, 89 p. 63 illus., 51 illus. in color.online resource. - NIMS Monographs,2197-8891. - NIMS Monographs,.

General introduction -- Changes in Schottky barrier height behavior of Pt-Ru alloy contacts on single-crystal ZnO -- Surface passivation effect on Schottky contact formation of oxide semiconductors -- Bias-induced interfacial redox reaction in oxide-based resistive random access memory structure -- Switching control of oxide-based resistive random access memory by valence state control of oxide -- Combinatorial thin film synthesis for new nanoelectronics materials -- General summary.

Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques. The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications. In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.

ISBN: 9784431548508

Standard No.: 10.1007/978-4-431-54850-8doiSubjects--Topical Terms:

670219
Electronics and Microelectronics, Instrumentation.

LC Class. No.: TA418.7-418.76

Dewey Class. No.: 620.44

Nanoscale Redox Reaction at Metal/Oxide Interface = A Case Study on Schottky Contact and ReRAM /
LDR:02984nam a22004215i 4500 001 1019956
003 DE-He213
005 20200706230359.0
007 cr nn 008mamaa
008 210318s2020 ja | s |||| 0|eng d
020 $a 9784431548508 $9 978-4-431-54850-8
024 7 $a 10.1007/978-4-431-54850-8 $2 doi
035 $a 978-4-431-54850-8
050 4 $a TA418.7-418.76
050 4 $a TA418.9.T45
072 7 $a TGM $2 bicssc
072 7 $a TEC021040 $2 bisacsh
072 7 $a TGM $2 thema
072 7 $a PNRX $2 thema
082 0 4 $a 620.44 $2 23
100 1 $a Nagata, Takahiro. $e author. $4 aut $4 http://id.loc.gov/vocabulary/relators/aut $3 1315344
245 1 0 $a Nanoscale Redox Reaction at Metal/Oxide Interface $h [electronic resource] : $b A Case Study on Schottky Contact and ReRAM / $c by Takahiro Nagata.
250 $a 1st ed. 2020.
264 1 $a Tokyo : $b Springer Japan : $b Imprint: Springer, $c 2020.
300 $a XI, 89 p. 63 illus., 51 illus. in color. $b online resource.
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
347 $a text file $b PDF $2 rda
490 1 $a NIMS Monographs, $x 2197-8891
505 0 $a General introduction -- Changes in Schottky barrier height behavior of Pt-Ru alloy contacts on single-crystal ZnO -- Surface passivation effect on Schottky contact formation of oxide semiconductors -- Bias-induced interfacial redox reaction in oxide-based resistive random access memory structure -- Switching control of oxide-based resistive random access memory by valence state control of oxide -- Combinatorial thin film synthesis for new nanoelectronics materials -- General summary.
520 $a Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques. The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications. In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 670219
650 1 4 $a Surfaces and Interfaces, Thin Films. $3 671207
650 0 $a Nanotechnology. $3 557660
650 0 $a Microelectronics. $3 554956
650 0 $a Electronics. $3 596389
650 0 $a Semiconductors. $3 578843
650 0 $a Thin films. $3 560219
650 0 $a Materials—Surfaces. $3 1253588
710 2 $a SpringerLink (Online service) $3 593884
773 0 $t Springer Nature eBook
776 0 8 $i Printed edition: $z 9784431548492
776 0 8 $i Printed edition: $z 9784431548515
830 0 $a NIMS Monographs, $x 2197-8891 $3 1253962
856 4 0 $u https://doi.org/10.1007/978-4-431-54850-8
912 $a ZDB-2-CMS
912 $a ZDB-2-SXC
950 $a Chemistry and Materials Science (SpringerNature-11644)
950 $a Chemistry and Material Science (R0) (SpringerNature-43709)