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Charge Transport in Low Dimensional Semiconductor Structures = The Maximum Entropy Approach /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Charge Transport in Low Dimensional Semiconductor Structures/ by Vito Dario Camiola, Giovanni Mascali, Vittorio Romano.
其他題名:	The Maximum Entropy Approach /
作者:	Camiola, Vito Dario.
其他作者:	Romano, Vittorio.
面頁冊數:	XVI, 337 p. 83 illus., 23 illus. in color.online resource. :
Contained By:	Springer Nature eBook
標題:	Mathematical and Computational Engineering. -
電子資源:	https://doi.org/10.1007/978-3-030-35993-5
ISBN:	9783030359935

Charge Transport in Low Dimensional Semiconductor Structures = The Maximum Entropy Approach /
Camiola, Vito Dario.

Charge Transport in Low Dimensional Semiconductor StructuresThe Maximum Entropy Approach /[electronic resource] :by Vito Dario Camiola, Giovanni Mascali, Vittorio Romano. - 1st ed. 2020. - XVI, 337 p. 83 illus., 23 illus. in color.online resource. - The European Consortium for Mathematics in Industry ;31. - The European Consortium for Mathematics in Industry ;21.

Band Structure and Boltzmann Equation -- Maximum Entropy Principle -- Application of MEP to Charge Transport in Semiconductors -- Application of MEP to Silicon -- Some Formal Properties of the Hydrodynamical Model -- Quantum Corrections to the Semiclassical Models -- Mathematical Models for the Double-Gate MOSFET -- Numerical Method and Simulations -- Application of MEP to Charge Transport in Graphene.

This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET. The models are derived from the semiclassical Boltzmann equation by means of the moment method and are closed by resorting to the maximum entropy principle. In the case of confinement, electrons are treated as waves in the confining direction by solving a one-dimensional Schrödinger equation obtaining subbands, while the longitudinal transport of subband electrons is described semiclassically. Limiting energy-transport and drift-diffusion models are also obtained by using suitable scaling procedures. An entire chapter in the book is dedicated to a promising new material like graphene. The models appear to be sound and sufficiently accurate for systematic use in computer-aided design simulators for complex electron devices. The book is addressed to applied mathematicians, physicists, and electronic engineers. It is written for graduate or PhD readers but the opening chapter contains a modicum of semiconductor physics, making it self-consistent and useful also for undergraduate students.

ISBN: 9783030359935

Standard No.: 10.1007/978-3-030-35993-5doiSubjects--Topical Terms:

1139415
Mathematical and Computational Engineering.

LC Class. No.: QA401-425

Dewey Class. No.: 530.15

Charge Transport in Low Dimensional Semiconductor Structures = The Maximum Entropy Approach /
LDR:03217nam a22004215i 4500 001 1020392
003 DE-He213
005 20200701005230.0
007 cr nn 008mamaa
008 210318s2020 gw | s |||| 0|eng d
020 $a 9783030359935 $9 978-3-030-35993-5
024 7 $a 10.1007/978-3-030-35993-5 $2 doi
035 $a 978-3-030-35993-5
050 4 $a QA401-425
050 4 $a QC19.2-20.85
072 7 $a PHU $2 bicssc
072 7 $a SCI040000 $2 bisacsh
072 7 $a PHU $2 thema
082 0 4 $a 530.15 $2 23
100 1 $a Camiola, Vito Dario. $e author. $4 aut $4 http://id.loc.gov/vocabulary/relators/aut $3 1315861
245 1 0 $a Charge Transport in Low Dimensional Semiconductor Structures $h [electronic resource] : $b The Maximum Entropy Approach / $c by Vito Dario Camiola, Giovanni Mascali, Vittorio Romano.
250 $a 1st ed. 2020.
264 1 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2020.
300 $a XVI, 337 p. 83 illus., 23 illus. in color. $b online resource.
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
347 $a text file $b PDF $2 rda
490 1 $a The European Consortium for Mathematics in Industry ; $v 31
505 0 $a Band Structure and Boltzmann Equation -- Maximum Entropy Principle -- Application of MEP to Charge Transport in Semiconductors -- Application of MEP to Silicon -- Some Formal Properties of the Hydrodynamical Model -- Quantum Corrections to the Semiclassical Models -- Mathematical Models for the Double-Gate MOSFET -- Numerical Method and Simulations -- Application of MEP to Charge Transport in Graphene.
520 $a This book offers, from both a theoretical and a computational perspective, an analysis of macroscopic mathematical models for description of charge transport in electronic devices, in particular in the presence of confining effects, such as in the double gate MOSFET. The models are derived from the semiclassical Boltzmann equation by means of the moment method and are closed by resorting to the maximum entropy principle. In the case of confinement, electrons are treated as waves in the confining direction by solving a one-dimensional Schrödinger equation obtaining subbands, while the longitudinal transport of subband electrons is described semiclassically. Limiting energy-transport and drift-diffusion models are also obtained by using suitable scaling procedures. An entire chapter in the book is dedicated to a promising new material like graphene. The models appear to be sound and sufficiently accurate for systematic use in computer-aided design simulators for complex electron devices. The book is addressed to applied mathematicians, physicists, and electronic engineers. It is written for graduate or PhD readers but the opening chapter contains a modicum of semiconductor physics, making it self-consistent and useful also for undergraduate students.
650 2 4 $a Mathematical and Computational Engineering. $3 1139415
650 2 4 $a Theoretical, Mathematical and Computational Physics. $3 768900
650 1 4 $a Mathematical Physics. $3 786661
650 0 $a Nanotechnology. $3 557660
650 0 $a Engineering mathematics. $3 562757
650 0 $a Applied mathematics. $3 1069907
650 0 $a Mathematical physics. $3 527831
700 1 $a Romano, Vittorio. $e editor. $4 aut $4 http://id.loc.gov/vocabulary/relators/aut $3 1267519
700 1 $a Mascali, Giovanni. $e author. $4 aut $4 http://id.loc.gov/vocabulary/relators/aut $3 1315862
710 2 $a SpringerLink (Online service) $3 593884
773 0 $t Springer Nature eBook
776 0 8 $i Printed edition: $z 9783030359928
776 0 8 $i Printed edition: $z 9783030359942
776 0 8 $i Printed edition: $z 9783030359959
830 0 $a The European Consortium for Mathematics in Industry ; $v 21 $3 1264918
856 4 0 $u https://doi.org/10.1007/978-3-030-35993-5
912 $a ZDB-2-SMA
912 $a ZDB-2-SXMS
950 $a Mathematics and Statistics (SpringerNature-11649)
950 $a Mathematics and Statistics (R0) (SpringerNature-43713)