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Ferroelectric-Gate Field Effect Transistor Memories = Device Physics and Applications /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Ferroelectric-Gate Field Effect Transistor Memories/ edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon.
其他題名:	Device Physics and Applications /
其他作者:	Yoon, Sung-Min.
面頁冊數:	XIV, 425 p. 313 illus., 183 illus. in color.online resource. :
Contained By:	Springer Nature eBook
標題:	Surface and Interface Science, Thin Films. -
電子資源:	https://doi.org/10.1007/978-981-15-1212-4
ISBN:	9789811512124

Ferroelectric-Gate Field Effect Transistor Memories = Device Physics and Applications /
Ferroelectric-Gate Field Effect Transistor MemoriesDevice Physics and Applications /[electronic resource] :edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon. - 2nd ed. 2020. - XIV, 425 p. 313 illus., 183 illus. in color.online resource. - Topics in Applied Physics,1310303-4216 ;. - Topics in Applied Physics,121.

I. Introduction -- II. Practical Characteristics of Inorganic Ferroelectric-gate FETs: Si-Based Ferroelectric-gate Field Effect Transistors -- III. Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors -- Ⅳ Practical Characteristics of Organic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors -- V Practical Characteristics of Organic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors -- VI Practical Characteristics of Organic Ferroelectric-Gate FETs : Ferroelectric-Gate Field Effect Transistors with Flexible Substrates -- Ⅶ Applications and Future Prospects.

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films. .

ISBN: 9789811512124

Standard No.: 10.1007/978-981-15-1212-4doiSubjects--Topical Terms:

782551
Surface and Interface Science, Thin Films.

LC Class. No.: TK7867-7867.5

Dewey Class. No.: 621.3815

Ferroelectric-Gate Field Effect Transistor Memories = Device Physics and Applications /
LDR:03935nam a22004215i 4500 001 1024523
003 DE-He213
005 20200703032415.0
007 cr nn 008mamaa
008 210318s2020 si | s |||| 0|eng d
020 $a 9789811512124 $9 978-981-15-1212-4
024 7 $a 10.1007/978-981-15-1212-4 $2 doi
035 $a 978-981-15-1212-4
050 4 $a TK7867-7867.5
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
072 7 $a TJFC $2 thema
072 7 $a TJFD $2 thema
082 0 4 $a 621.3815 $2 23
245 1 0 $a Ferroelectric-Gate Field Effect Transistor Memories $h [electronic resource] : $b Device Physics and Applications / $c edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon.
250 $a 2nd ed. 2020.
264 1 $a Singapore : $b Springer Singapore : $b Imprint: Springer, $c 2020.
300 $a XIV, 425 p. 313 illus., 183 illus. in color. $b online resource.
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
347 $a text file $b PDF $2 rda
490 1 $a Topics in Applied Physics, $x 0303-4216 ; $v 131
505 0 $a I. Introduction -- II. Practical Characteristics of Inorganic Ferroelectric-gate FETs: Si-Based Ferroelectric-gate Field Effect Transistors -- III. Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors -- Ⅳ Practical Characteristics of Organic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors -- V Practical Characteristics of Organic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors -- VI Practical Characteristics of Organic Ferroelectric-Gate FETs : Ferroelectric-Gate Field Effect Transistors with Flexible Substrates -- Ⅶ Applications and Future Prospects.
520 $a This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films. .
650 2 4 $a Surface and Interface Science, Thin Films. $3 782551
650 2 4 $a Circuits and Systems. $3 670901
650 2 4 $a Surfaces and Interfaces, Thin Films. $3 671207
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 670219
650 1 4 $a Electronic Circuits and Devices. $3 782968
650 0 $a Interfaces (Physical sciences). $3 795468
650 0 $a Surfaces (Physics). $3 716359
650 0 $a Thin films. $3 560219
650 0 $a Materials—Surfaces. $3 1253588
650 0 $a Microelectronics. $3 554956
650 0 $a Electronics. $3 596389
650 0 $a Electronic circuits. $3 563332
700 1 $a Yoon, Sung-Min. $e editor. $4 edt $4 http://id.loc.gov/vocabulary/relators/edt $3 1270688
700 1 $a Sakai, Shigeki. $e editor. $4 edt $4 http://id.loc.gov/vocabulary/relators/edt $3 1270687
700 1 $a Okuyama, Masanori. $4 edt $4 http://id.loc.gov/vocabulary/relators/edt $3 676291
700 1 $a Ishiwara, Hiroshi. $e editor. $4 edt $4 http://id.loc.gov/vocabulary/relators/edt $3 1270686
700 1 $a Park, Byung-Eun. $4 edt $4 http://id.loc.gov/vocabulary/relators/edt $3 1114033
710 2 $a SpringerLink (Online service) $3 593884
773 0 $t Springer Nature eBook
776 0 8 $i Printed edition: $z 9789811512117
776 0 8 $i Printed edition: $z 9789811512131
776 0 8 $i Printed edition: $z 9789811512148
830 0 $a Topics in Applied Physics, $x 0303-4216 ; $v 121 $3 1253591
856 4 0 $u https://doi.org/10.1007/978-981-15-1212-4
912 $a ZDB-2-PHA
912 $a ZDB-2-SXP
950 $a Physics and Astronomy (SpringerNature-11651)
950 $a Physics and Astronomy (R0) (SpringerNature-43715)