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High-Frequency GaN Electronic Devices

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	High-Frequency GaN Electronic Devices/ edited by Patrick Fay, Debdeep Jena, Paul Maki.
其他作者:	Maki, Paul.
面頁冊數:	VIII, 309 p. 221 illus., 199 illus. in color.online resource. :
Contained By:	Springer Nature eBook
標題:	Electronics and Microelectronics, Instrumentation. -
電子資源:	https://doi.org/10.1007/978-3-030-20208-8
ISBN:	9783030202088

High-Frequency GaN Electronic Devices
High-Frequency GaN Electronic Devices[electronic resource] /edited by Patrick Fay, Debdeep Jena, Paul Maki. - 1st ed. 2020. - VIII, 309 p. 221 illus., 199 illus. in color.online resource.

Chapter 1. Introduction -- Chapter 2.High Power High Frequency Transistors: A Materials Perspective -- Chapter 3. Isotope Engineering of GaN for Boosting Transistor Speeds -- Chapter 4. Linearity Aspects of High Power Amplification in GaN Transistors -- Chapter 5. III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA) -- Chapter 6.Plasma-Wave Propagation in GaN and Its Applications -- Chapter 7.Numerical Simulation of Distributed Electromagnetic and Plasma-wave Effect Devices -- Chapter 8.Resonant Tunneling Transport in Polar III-Nitride Heterostructures -- Chapter 9.Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes -- Chapter 10.Non-Contact Metrology for mm-wave and THz Electronics.

This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides “vertically integrated” coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.

ISBN: 9783030202088

Standard No.: 10.1007/978-3-030-20208-8doiSubjects--Topical Terms:

670219
Electronics and Microelectronics, Instrumentation.

LC Class. No.: TK7888.4

Dewey Class. No.: 621.3815

High-Frequency GaN Electronic Devices
LDR:03795nam a22003975i 4500 001 1026781
003 DE-He213
005 20200705111040.0
007 cr nn 008mamaa
008 210318s2020 gw | s |||| 0|eng d
020 $a 9783030202088 $9 978-3-030-20208-8
024 7 $a 10.1007/978-3-030-20208-8 $2 doi
035 $a 978-3-030-20208-8
050 4 $a TK7888.4
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
072 7 $a TJFC $2 thema
082 0 4 $a 621.3815 $2 23
245 1 0 $a High-Frequency GaN Electronic Devices $h [electronic resource] / $c edited by Patrick Fay, Debdeep Jena, Paul Maki.
250 $a 1st ed. 2020.
264 1 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2020.
300 $a VIII, 309 p. 221 illus., 199 illus. in color. $b online resource.
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
347 $a text file $b PDF $2 rda
505 0 $a Chapter 1. Introduction -- Chapter 2.High Power High Frequency Transistors: A Materials Perspective -- Chapter 3. Isotope Engineering of GaN for Boosting Transistor Speeds -- Chapter 4. Linearity Aspects of High Power Amplification in GaN Transistors -- Chapter 5. III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA) -- Chapter 6.Plasma-Wave Propagation in GaN and Its Applications -- Chapter 7.Numerical Simulation of Distributed Electromagnetic and Plasma-wave Effect Devices -- Chapter 8.Resonant Tunneling Transport in Polar III-Nitride Heterostructures -- Chapter 9.Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes -- Chapter 10.Non-Contact Metrology for mm-wave and THz Electronics.
520 $a This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides “vertically integrated” coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 670219
650 2 4 $a Electronic Circuits and Devices. $3 782968
650 1 4 $a Circuits and Systems. $3 670901
650 0 $a Microelectronics. $3 554956
650 0 $a Electronics. $3 596389
650 0 $a Electronic circuits. $3 563332
700 1 $a Maki, Paul. $4 edt $4 http://id.loc.gov/vocabulary/relators/edt $3 713628
700 1 $a Jena, Debdeep. $4 edt $4 http://id.loc.gov/vocabulary/relators/edt $3 677183
700 1 $a Fay, Patrick. $e editor. $4 edt $4 http://id.loc.gov/vocabulary/relators/edt $3 1323114
710 2 $a SpringerLink (Online service) $3 593884
773 0 $t Springer Nature eBook
776 0 8 $i Printed edition: $z 9783030202071
776 0 8 $i Printed edition: $z 9783030202095
776 0 8 $i Printed edition: $z 9783030202101
856 4 0 $u https://doi.org/10.1007/978-3-030-20208-8
912 $a ZDB-2-ENG
912 $a ZDB-2-SXE
950 $a Engineering (SpringerNature-11647)
950 $a Engineering (R0) (SpringerNature-43712)