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Design and Implementation of Ga2O3 Deep-Uv Photodetectors with Improved Intrinsic Solar Band Rejection.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Design and Implementation of Ga2O3 Deep-Uv Photodetectors with Improved Intrinsic Solar Band Rejection./
Author:	Bunk, Ryan James.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
Description:	63 p.
Notes:	Source: Masters Abstracts International, Volume: 82-03.
Contained By:	Masters Abstracts International82-03.
Subject:	Electrical engineering. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=27995172
ISBN:	9798672161310

Design and Implementation of Ga2O3 Deep-Uv Photodetectors with Improved Intrinsic Solar Band Rejection.
Bunk, Ryan James.

Design and Implementation of Ga2O3 Deep-Uv Photodetectors with Improved Intrinsic Solar Band Rejection. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 63 p.

Source: Masters Abstracts International, Volume: 82-03.

Thesis (M.S.)--University of California, Davis, 2020.

This item must not be sold to any third party vendors.

In the recent past, demand for photodetectors with intrinsic band rejection increased as both civilian and military markets realized the potential of this type of device. The main factor influencing this interest are their inherent design simplicity, as cheaper but broad-band photodetector materials such as gallium arsenide (GaAs) and silicon (Si) would have very difficult filter requirements to adequately suppress the entire solar spectrum. On the other hand, exploiting the fundamental band gap of a semiconductor to provide band rejection would at minimum require no more complexity than two metal contacts and a homogenous substrate. A strong contender to fill this technology gap is β-Ga2O3, with a fundamental band gap of 4.9 eV and the commercially realized ability to be produced as bulk wafer substrates. This enormous promise falls apart upon closer examination due to the fundamental physics of the β-Ga2O3 system, in particular due to hole self-trapping. However, in the process of examining this material, several design strategies for the design of solar-blind detectors were found. Internal photoemission was identified as one of the primary mechanisms leading to solar-band response, and techniques were studied and implemented to minimize internal photoemission at the contacts.

ISBN: 9798672161310Subjects--Topical Terms:

596380
Electrical engineering.
Subjects--Index Terms:

Photodetectors

Design and Implementation of Ga2O3 Deep-Uv Photodetectors with Improved Intrinsic Solar Band Rejection.
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500 $a Source: Masters Abstracts International, Volume: 82-03.
500 $a Advisor: Woodall, Jerry.
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520 $a In the recent past, demand for photodetectors with intrinsic band rejection increased as both civilian and military markets realized the potential of this type of device. The main factor influencing this interest are their inherent design simplicity, as cheaper but broad-band photodetector materials such as gallium arsenide (GaAs) and silicon (Si) would have very difficult filter requirements to adequately suppress the entire solar spectrum. On the other hand, exploiting the fundamental band gap of a semiconductor to provide band rejection would at minimum require no more complexity than two metal contacts and a homogenous substrate. A strong contender to fill this technology gap is β-Ga2O3, with a fundamental band gap of 4.9 eV and the commercially realized ability to be produced as bulk wafer substrates. This enormous promise falls apart upon closer examination due to the fundamental physics of the β-Ga2O3 system, in particular due to hole self-trapping. However, in the process of examining this material, several design strategies for the design of solar-blind detectors were found. Internal photoemission was identified as one of the primary mechanisms leading to solar-band response, and techniques were studied and implemented to minimize internal photoemission at the contacts.
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