國立虎尾科技大學 |

TFET Integrated Circuits = From Perspective Towards Reality /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	TFET Integrated Circuits/ by Navneet Gupta, Adam Makosiej, Amara Amara, Andrei Vladimirescu, Costin Anghel.
其他題名:	From Perspective Towards Reality /
其他題名:	a
作者:	Gupta, Navneet.
其他作者:	Makosiej, Adam.
面頁冊數:	XV, 139 p. 129 illus., 104 illus. in color.online resource. :
Contained By:	Springer Nature eBook
標題:	Electronic circuits. -
電子資源:	https://doi.org/10.1007/978-3-030-55119-3
ISBN:	9783030551193

TFET Integrated Circuits = From Perspective Towards Reality /
Gupta, Navneet.

TFET Integrated CircuitsFrom Perspective Towards Reality /[electronic resource] :aby Navneet Gupta, Adam Makosiej, Amara Amara, Andrei Vladimirescu, Costin Anghel. - 1st ed. 2021. - XV, 139 p. 129 illus., 104 illus. in color.online resource.

Introduction -- State of the art -- TFET circuits -- Extension of TFET architectures to present CMOS technology -- System Architectures -- Conclusion & Future Perspective.

This book describes the physical operation of the Tunnel Field-effect Transistor (TFET) and circuits built with this device. Whereas the majority of publications on TFETs describe in detail the device, its characteristics, variants and performance, this will be the first book addressing TFET integrated circuits (TFET ICs). The authors describe the peculiarities of TFET ICs and their differences with MOSFETs. They also develop and analyze a number of logic circuits and memories. The discussion also includes complex circuits combining CMOS and TFET, as well as a potential fabrication process in Silicon. Provides readers with a realistic view of a potential future path of higher-scale integration of circuits and systems; Discusses the advantages and disadvantages of TFETs vs. CMOS for different applications; Describes methodology to combine two types of devices on the same Silicon substrate to benefit from the speed of CMOS and the low leakage of TFETs and demonstrates the performance and integration gain of the two devices complementing each other.

ISBN: 9783030551193

Standard No.: 10.1007/978-3-030-55119-3doiSubjects--Topical Terms:

563332
Electronic circuits.

LC Class. No.: TK7867-7867.5

Dewey Class. No.: 621.3815

TFET Integrated Circuits = From Perspective Towards Reality /
LDR:02689nam a22004215i 4500 001 1046130
003 DE-He213
005 20210818022001.0
007 cr nn 008mamaa
008 220103s2021 sz | s |||| 0|eng d
020 $a 9783030551193 $9 978-3-030-55119-3
024 7 $a 10.1007/978-3-030-55119-3 $2 doi
035 $a 978-3-030-55119-3
050 4 $a TK7867-7867.5
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
072 7 $a TJFC $2 thema
072 7 $a TJFD $2 thema
082 0 4 $a 621.3815 $2 23
100 1 $a Gupta, Navneet. $e author. $4 aut $4 http://id.loc.gov/vocabulary/relators/aut $3 1349643
245 1 0 $a TFET Integrated Circuits $h [electronic resource] : $b From Perspective Towards Reality / $c by Navneet Gupta, Adam Makosiej, Amara Amara, Andrei Vladimirescu, Costin Anghel.
246 3 $a a
250 $a 1st ed. 2021.
264 1 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2021.
300 $a XV, 139 p. 129 illus., 104 illus. in color. $b online resource.
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
347 $a text file $b PDF $2 rda
505 0 $a Introduction -- State of the art -- TFET circuits -- Extension of TFET architectures to present CMOS technology -- System Architectures -- Conclusion & Future Perspective.
520 $a This book describes the physical operation of the Tunnel Field-effect Transistor (TFET) and circuits built with this device. Whereas the majority of publications on TFETs describe in detail the device, its characteristics, variants and performance, this will be the first book addressing TFET integrated circuits (TFET ICs). The authors describe the peculiarities of TFET ICs and their differences with MOSFETs. They also develop and analyze a number of logic circuits and memories. The discussion also includes complex circuits combining CMOS and TFET, as well as a potential fabrication process in Silicon. Provides readers with a realistic view of a potential future path of higher-scale integration of circuits and systems; Discusses the advantages and disadvantages of TFETs vs. CMOS for different applications; Describes methodology to combine two types of devices on the same Silicon substrate to benefit from the speed of CMOS and the low leakage of TFETs and demonstrates the performance and integration gain of the two devices complementing each other.
650 0 $a Electronic circuits. $3 563332
650 0 $a Electronics. $3 596389
650 0 $a Microelectronics. $3 554956
650 1 4 $a Electronic Circuits and Devices. $3 782968
650 2 4 $a Circuits and Systems. $3 670901
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 670219
700 1 $a Makosiej, Adam. $e author. $4 aut $4 http://id.loc.gov/vocabulary/relators/aut $3 1349644
700 1 $a Amara, Amara. $4 aut $4 http://id.loc.gov/vocabulary/relators/aut $3 681712
700 1 $a Vladimirescu, Andrei. $e author. $4 aut $4 http://id.loc.gov/vocabulary/relators/aut $3 1349645
700 1 $a Anghel, Costin. $e author. $4 aut $4 http://id.loc.gov/vocabulary/relators/aut $3 1349646
710 2 $a SpringerLink (Online service) $3 593884
773 0 $t Springer Nature eBook
776 0 8 $i Printed edition: $z 9783030551186
776 0 8 $i Printed edition: $z 9783030551209
776 0 8 $i Printed edition: $z 9783030551216
856 4 0 $u https://doi.org/10.1007/978-3-030-55119-3
912 $a ZDB-2-ENG
912 $a ZDB-2-SXE
950 $a Engineering (SpringerNature-11647)
950 $a Engineering (R0) (SpringerNature-43712)