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Fundamental Properties of Semiconductor Nanowires

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Fundamental Properties of Semiconductor Nanowires/ edited by Naoki Fukata, Riccardo Rurali.
other author:	Fukata, Naoki.
Description:	VIII, 454 p. 219 illus., 196 illus. in color.online resource. :
Contained By:	Springer Nature eBook
Subject:	Nanotechnology. -
Online resource:	https://doi.org/10.1007/978-981-15-9050-4
ISBN:	9789811590504

Fundamental Properties of Semiconductor Nanowires
Fundamental Properties of Semiconductor Nanowires[electronic resource] /edited by Naoki Fukata, Riccardo Rurali. - 1st ed. 2021. - VIII, 454 p. 219 illus., 196 illus. in color.online resource.

Part I: Growth -- 1. Growth -- Part II: Functionalization -- 2. Surface science -- 3. Doping -- Part III: Characterization -- 4. In-situ TEM -- 5. Time-resolved in-situ X-ray -- 6. Characterisation of semiconductor nanowires by electron beam induced microscopy and cathodoluminescence -- 7. Optical Spectroscopy -- 8. Raman Spectroscopy -- 9. First-principles calculations -- Part IV: Applications -- 10. FET -- 11. Laser. .

This book covers virtually all aspects of semiconductor nanowires, from growth to related applications, in detail. First, it addresses nanowires’ growth mechanism, one of the most important topics at the forefront of nanowire research. The focus then shifts to surface functionalization: nanowires have a high surface-to-volume ratio and thus are well-suited to surface modification, which effectively functionalizes them. The book also discusses the latest advances in the study of impurity doping, a crucial process in nanowires. In addition, considerable attention is paid to characterization techniques such as nanoscale and in situ methods, which are indispensable for understanding the novel properties of nanowires. Theoretical calculations are also essential to understanding nanowires’ characteristics, particularly those that derive directly from their special nature as one-dimensional nanoscale structures. In closing, the book considers future applications of nanowire structures in devices such as FETs and lasers.

ISBN: 9789811590504

Standard No.: 10.1007/978-981-15-9050-4doiSubjects--Topical Terms:

557660
Nanotechnology.

LC Class. No.: T174.7

Dewey Class. No.: 620.115

Fundamental Properties of Semiconductor Nanowires
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505 0 $a Part I: Growth -- 1. Growth -- Part II: Functionalization -- 2. Surface science -- 3. Doping -- Part III: Characterization -- 4. In-situ TEM -- 5. Time-resolved in-situ X-ray -- 6. Characterisation of semiconductor nanowires by electron beam induced microscopy and cathodoluminescence -- 7. Optical Spectroscopy -- 8. Raman Spectroscopy -- 9. First-principles calculations -- Part IV: Applications -- 10. FET -- 11. Laser. .
520 $a This book covers virtually all aspects of semiconductor nanowires, from growth to related applications, in detail. First, it addresses nanowires’ growth mechanism, one of the most important topics at the forefront of nanowire research. The focus then shifts to surface functionalization: nanowires have a high surface-to-volume ratio and thus are well-suited to surface modification, which effectively functionalizes them. The book also discusses the latest advances in the study of impurity doping, a crucial process in nanowires. In addition, considerable attention is paid to characterization techniques such as nanoscale and in situ methods, which are indispensable for understanding the novel properties of nanowires. Theoretical calculations are also essential to understanding nanowires’ characteristics, particularly those that derive directly from their special nature as one-dimensional nanoscale structures. In closing, the book considers future applications of nanowire structures in devices such as FETs and lasers.
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