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Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals/ by Daniel Montero Álvarez.
Author:	Montero Álvarez, Daniel.
Description:	XXXVI, 230 p. 137 illus., 124 illus. in color.online resource. :
Contained By:	Springer Nature eBook
Subject:	Chemistry/Food Science, general. -
Online resource:	https://doi.org/10.1007/978-3-030-63826-9
ISBN:	9783030638269

Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals
Montero Álvarez, Daniel.

Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals[electronic resource] /by Daniel Montero Álvarez. - 1st ed. 2021. - XXXVI, 230 p. 137 illus., 124 illus. in color.online resource. - Springer Theses, Recognizing Outstanding Ph.D. Research,2190-5061. - Springer Theses, Recognizing Outstanding Ph.D. Research,.

Introduction -- Experimental techniques -- Results: NLA using a short pulse duration KrF laser -- Results: NLA using a long pulse duration XeCl laser -- Results: Integrating the supersaturated material in a CMOS pixel matrix.

This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.

ISBN: 9783030638269

Standard No.: 10.1007/978-3-030-63826-9doiSubjects--Topical Terms:

593890
Chemistry/Food Science, general.

LC Class. No.: TA1750-1750.22

Dewey Class. No.: 620.11295

Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals
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