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Emerging Non-volatile Memory Technologies = Physics, Engineering, and Applications /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Emerging Non-volatile Memory Technologies/ edited by Wen Siang Lew, Gerard Joseph Lim, Putu Andhita Dananjaya.
其他題名:	Physics, Engineering, and Applications /
其他作者:	Dananjaya, Putu Andhita.
面頁冊數:	VIII, 438 p. 254 illus., 231 illus. in color.online resource. :
Contained By:	Springer Nature eBook
標題:	Solid State Physics. -
電子資源:	https://doi.org/10.1007/978-981-15-6912-8
ISBN:	9789811569128

Emerging Non-volatile Memory Technologies = Physics, Engineering, and Applications /
Emerging Non-volatile Memory TechnologiesPhysics, Engineering, and Applications /[electronic resource] :edited by Wen Siang Lew, Gerard Joseph Lim, Putu Andhita Dananjaya. - 1st ed. 2021. - VIII, 438 p. 254 illus., 231 illus. in color.online resource.

Microwave Oscillators and Detectors Based on Magnetic Tunnel Junctions -- Spin Transfer Torque Magnetoresistive Random Access Memory -- Current-Driven Domain Wall Dynamics in Magnetic Heterostructures for Memory Applications -- Electric-field-controlled MRAM: Physics and Applications -- Chiral Magnetic Domain Wall & Skyrmion Memory Devices -- Circuit Design for Non-volatile Magnetic Memory -- Domain Wall Programmable Magnetic Logic -- 3D Nanomagnetic Logic -- Spintronics for Neuromorphic Engineering -- Resistive Random Access Memory: Device Physics and Array Architectures -- RRAM Characterization and Modelling -- RRAM-based Neuromorphic Computing Systems -- An Automatic Sound Classification Framework with Non-Volatile Memory.

This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.

ISBN: 9789811569128

Standard No.: 10.1007/978-981-15-6912-8doiSubjects--Topical Terms:

768851
Solid State Physics.

LC Class. No.: QC750-766

Dewey Class. No.: 538

Emerging Non-volatile Memory Technologies = Physics, Engineering, and Applications /
LDR:03234nam a22003975i 4500 001 1051795
003 DE-He213
005 20210622062818.0
007 cr nn 008mamaa
008 220103s2021 si | s |||| 0|eng d
020 $a 9789811569128 $9 978-981-15-6912-8
024 7 $a 10.1007/978-981-15-6912-8 $2 doi
035 $a 978-981-15-6912-8
050 4 $a QC750-766
050 4 $a QC764.5-766
072 7 $a PHK $2 bicssc
072 7 $a SCI038000 $2 bisacsh
072 7 $a PHK $2 thema
082 0 4 $a 538 $2 23
245 1 0 $a Emerging Non-volatile Memory Technologies $h [electronic resource] : $b Physics, Engineering, and Applications / $c edited by Wen Siang Lew, Gerard Joseph Lim, Putu Andhita Dananjaya.
250 $a 1st ed. 2021.
264 1 $a Singapore : $b Springer Singapore : $b Imprint: Springer, $c 2021.
300 $a VIII, 438 p. 254 illus., 231 illus. in color. $b online resource.
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
347 $a text file $b PDF $2 rda
505 0 $a Microwave Oscillators and Detectors Based on Magnetic Tunnel Junctions -- Spin Transfer Torque Magnetoresistive Random Access Memory -- Current-Driven Domain Wall Dynamics in Magnetic Heterostructures for Memory Applications -- Electric-field-controlled MRAM: Physics and Applications -- Chiral Magnetic Domain Wall & Skyrmion Memory Devices -- Circuit Design for Non-volatile Magnetic Memory -- Domain Wall Programmable Magnetic Logic -- 3D Nanomagnetic Logic -- Spintronics for Neuromorphic Engineering -- Resistive Random Access Memory: Device Physics and Array Architectures -- RRAM Characterization and Modelling -- RRAM-based Neuromorphic Computing Systems -- An Automatic Sound Classification Framework with Non-Volatile Memory.
520 $a This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
650 2 4 $a Solid State Physics. $3 768851
650 2 4 $a Spectroscopy/Spectrometry. $3 782573
650 2 4 $a Circuits and Systems. $3 670901
650 2 4 $a Optical and Electronic Materials. $3 593919
650 1 4 $a Magnetism, Magnetic Materials. $3 671150
650 0 $a Solid state physics. $3 641431
650 0 $a Spectroscopy. $3 1102161
650 0 $a Electronic circuits. $3 563332
650 0 $a Electronic materials. $3 1253592
650 0 $a Optical materials. $3 672695
650 0 $a Magnetic materials. $3 639418
650 0 $a Magnetism. $3 579937
700 1 $a Dananjaya, Putu Andhita. $e editor. $4 edt $4 http://id.loc.gov/vocabulary/relators/edt $3 1356362
700 1 $a Lim, Gerard Joseph. $e editor. $4 edt $4 http://id.loc.gov/vocabulary/relators/edt $3 1356361
700 1 $a Lew, Wen Siang. $e editor. $4 edt $4 http://id.loc.gov/vocabulary/relators/edt $3 1356360
710 2 $a SpringerLink (Online service) $3 593884
773 0 $t Springer Nature eBook
776 0 8 $i Printed edition: $z 9789811569104
776 0 8 $i Printed edition: $z 9789811569111
856 4 0 $u https://doi.org/10.1007/978-981-15-6912-8
912 $a ZDB-2-PHA
912 $a ZDB-2-SXP
950 $a Physics and Astronomy (SpringerNature-11651)
950 $a Physics and Astronomy (R0) (SpringerNature-43715)