國立虎尾科技大學 |

Electronic Properties of Rhombohedral Graphite

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Electronic Properties of Rhombohedral Graphite/ by Servet Ozdemir.
作者:	Ozdemir, Servet.
面頁冊數:	XV, 132 p. 66 illus., 54 illus. in color.online resource. :
Contained By:	Springer Nature eBook
標題:	Materials Science, general. -
電子資源:	https://doi.org/10.1007/978-3-030-88307-2
ISBN:	9783030883072

Electronic Properties of Rhombohedral Graphite
Ozdemir, Servet.

Electronic Properties of Rhombohedral Graphite[electronic resource] /by Servet Ozdemir. - 1st ed. 2021. - XV, 132 p. 66 illus., 54 illus. in color.online resource. - Springer Theses, Recognizing Outstanding Ph.D. Research,2190-5061. - Springer Theses, Recognizing Outstanding Ph.D. Research,.

Introduction To Rhombohedral Graphite -- Fundamentals Of Electron Transport -- Experimental Technicalities -- Bulk Versus Surface Conduction -- Landau Level Spectroscopy.

This thesis presents the first systematic electron transport investigation of rhombohedral graphite (RG) films and thus lies at the interface of graphene physics, vdW heterostructure devices and topological matter. Electron transport investigation into the rhombohedral phase of graphite was limited to a few layers of graphene due to the competing hexagonal phase being more abundant. This work reports that in exfoliated natural graphite films, rhombohedral domains of up to 50 layers can be found. In the low energy limit, these domains behave as an N-layer generalisation of graphene. Moreover, being a potential alternative to twisted bilayer graphene systems, RG films show a spontaneous metal-insulator transition, with characteristic symmetry properties that could be described by mean-field theory where superconductivity is also predicted in these low energy bands. A nodal-line semimetal in the bulk limit, RG thin films are a 3D generalisation of the simplest topological insulator model: the Su-Schrieffer-Heeger chain. Similar to the more usual topological insulators, RG films exhibit parallel conduction of bulk states, which undergo three-dimensional quantum transport that reflects bulk topology.

ISBN: 9783030883072

Standard No.: 10.1007/978-3-030-88307-2doiSubjects--Topical Terms:

683521
Materials Science, general.

LC Class. No.: QC173.45-173.458

Dewey Class. No.: 530.41

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