國立虎尾科技大學 |

Backside-Integrated III-V-on-Silicon Lasers and Modulators.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Backside-Integrated III-V-on-Silicon Lasers and Modulators./
Author:	Thiessen, Torrey Lane.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2021,
Description:	168 p.
Notes:	Source: Dissertations Abstracts International, Volume: 83-01, Section: B.
Contained By:	Dissertations Abstracts International83-01B.
Subject:	Optics. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28319146
ISBN:	9798522943561

Backside-Integrated III-V-on-Silicon Lasers and Modulators.
Thiessen, Torrey Lane.

Backside-Integrated III-V-on-Silicon Lasers and Modulators. - Ann Arbor : ProQuest Dissertations & Theses, 2021 - 168 p.

Source: Dissertations Abstracts International, Volume: 83-01, Section: B.

Thesis (Ph.D.)--University of Toronto (Canada), 2021.

This item must not be sold to any third party vendors.

III-V-on-silicon (III-V-on-Si) bonding has emerged as a viable way to integrate lasers with Si photonic circuits at the wafer-scale. However, hybrid III-V-on-Si integration is often plagued by high thermal impedance and difficulty in co-integration with other materials. In this thesis, we design and demonstrate the first active devices on a new Back-Side-on-Buried-Oxide (BSoBOX integration process, in which the III-V material is introduced from the back of the silicon-on-insulator (SOI) wafer to address the common problems of III-V-on-Si integration. While designing and characterizing devices on the BSoBOX platform, the merits and limitations of the platform are also evaluated. First, we develop an optimization technique for producing short, broadband transitions between the SOI waveguides and the hybrid III-V-on-Si waveguides. The eigenmode-expansion based optimization process manipulates the lengths of short sub-tapers to produce a transition that maintains adiabaticity in the shortest length possible. Compared to an 80 µm long linear taper, with a power transfer efficiency of ∼85% at 1310 nm, the optimized design has a length of 80 µm and an efficiency ≥99.5% across the O-band.Next, two types of lasers are evaluated. We demonstrate distributed feedback lasers with threshold currents as low as 32 mA and 20 mW of waveguide-coupled power from a single end of the device. The side mode suppression ratio (SMSR) is around 50 dB within the range of 20 °C-60 °C and operation up to 80 °C is observed. We also demonstrate the first III-V-on-Si discrete-mode lasers, with the best device exhibiting 17 mW of waveguide-coupled power, a Lorentzian linewidth of 18 kHz and a SMSR ≥60 dB. The performance of these devices is comparable to the state-of-the-art III-V-on-Si lasers, despite this being the first iteration of the BSoBOX platform.Lastly, the first high-speed InP-on-Si modulators are designed and characterized on a frontside integrated platform that can be later converted to BSoBOX integration. The DC efficiency is 1.3 V·cm, roughly twice as high as lateral PN junction designs, while maintaining a comparable bandwidth of 30 GHz. Simulations show the BSoBOX designs will lead to a ∼4x improvement in efficiency and roughly 50% improvement in bandwidth compared to the current work.

ISBN: 9798522943561Subjects--Topical Terms:

595336
Optics.
Subjects--Index Terms:

Hybrid lasers

Backside-Integrated III-V-on-Silicon Lasers and Modulators.
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300 $a 168 p.
500 $a Source: Dissertations Abstracts International, Volume: 83-01, Section: B.
500 $a Advisor: Poon, Joyce;Menezo, Sylvie.
502 $a Thesis (Ph.D.)--University of Toronto (Canada), 2021.
506 $a This item must not be sold to any third party vendors.
520 $a III-V-on-silicon (III-V-on-Si) bonding has emerged as a viable way to integrate lasers with Si photonic circuits at the wafer-scale. However, hybrid III-V-on-Si integration is often plagued by high thermal impedance and difficulty in co-integration with other materials. In this thesis, we design and demonstrate the first active devices on a new Back-Side-on-Buried-Oxide (BSoBOX integration process, in which the III-V material is introduced from the back of the silicon-on-insulator (SOI) wafer to address the common problems of III-V-on-Si integration. While designing and characterizing devices on the BSoBOX platform, the merits and limitations of the platform are also evaluated. First, we develop an optimization technique for producing short, broadband transitions between the SOI waveguides and the hybrid III-V-on-Si waveguides. The eigenmode-expansion based optimization process manipulates the lengths of short sub-tapers to produce a transition that maintains adiabaticity in the shortest length possible. Compared to an 80 µm long linear taper, with a power transfer efficiency of ∼85% at 1310 nm, the optimized design has a length of 80 µm and an efficiency ≥99.5% across the O-band.Next, two types of lasers are evaluated. We demonstrate distributed feedback lasers with threshold currents as low as 32 mA and 20 mW of waveguide-coupled power from a single end of the device. The side mode suppression ratio (SMSR) is around 50 dB within the range of 20 °C-60 °C and operation up to 80 °C is observed. We also demonstrate the first III-V-on-Si discrete-mode lasers, with the best device exhibiting 17 mW of waveguide-coupled power, a Lorentzian linewidth of 18 kHz and a SMSR ≥60 dB. The performance of these devices is comparable to the state-of-the-art III-V-on-Si lasers, despite this being the first iteration of the BSoBOX platform.Lastly, the first high-speed InP-on-Si modulators are designed and characterized on a frontside integrated platform that can be later converted to BSoBOX integration. The DC efficiency is 1.3 V·cm, roughly twice as high as lateral PN junction designs, while maintaining a comparable bandwidth of 30 GHz. Simulations show the BSoBOX designs will lead to a ∼4x improvement in efficiency and roughly 50% improvement in bandwidth compared to the current work.
590 $a School code: 0779.
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650 4 $a Materials science. $3 557839
650 4 $a Mechanical engineering. $3 557493
650 4 $a Photonics. $3 562392
650 4 $a Lasers. $3 557748
650 4 $a Electric fields. $3 903633
650 4 $a Optimization. $3 669174
650 4 $a Efficiency. $3 1086052
653 $a Hybrid lasers
653 $a Integrated optics
653 $a Modulators
653 $a Photonics
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710 2 $a University of Toronto (Canada). $b Electrical and Computer Engineering. $3 1148628
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