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Spintronics : = materials, devices and applications /

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Spintronics :/ edited by Kaiyou Wang, Meiyin Yang and Jun Luo.
其他題名:	materials, devices and applications /
其他題名:	Materials, devices and applications
其他作者:	Luo, Jun
出版者:	Hoboken, NJ :John Wiley & Sons, : c2022.,
面頁冊數:	xv, 313 p. :ill. (some col.) ; : 26 cm.;
標題:	Spintronics. -
ISBN:	9781119698975 (hbk.) :

Spintronics : = materials, devices and applications /
Spintronics :materials, devices and applications /Materials, devices and applicationsedited by Kaiyou Wang, Meiyin Yang and Jun Luo. - Hoboken, NJ :John Wiley & Sons,c2022. - xv, 313 p. :ill. (some col.) ;26 cm. - Wiley series in materials for electronic and optoelectronic applications. - Wiley series in materials for electronic and optoelectronic applications..

Includes bibliographical references and index.

"A brief introduction of theoretical and experimental research activities of spintronics materials, devices and applications recently. Giant Magnetoresistance (GMR) sensors are promising candidates for biomedical and environmental application such as detecting virus, cancer cells or heavy metal atoms. This detecting method is simple and convenient for individuals to diagnose health issues. The chapter will explain why the GMR materials and devices are useful in these specific applications and also involve the post 2016 developments for GMR sensors. TMR has much larger value of magneto-resistance than GMR, which provides higher resolution for detecting magnetic field. Now it is used in magnetic read head, earth magnetic sensors or other magnetic field detection related applications. The very recent progress on TMR sensors and its industry prospect will be also introduced in this chapter. Spin transfer torque (STT) which transfers spin angular momentum to adjacent magnets to manipulate the spin direction, will be applied widely in the next generation non-volatile STT-MRAM. STT-MRAM has the potential to become a leading storage technology, thanks to its high performance, easy downscaling to below 10 nm nodes and low cost. Recent research of STT-MRAM is now focusing on improving the thermal stability, endurance and TMR value, as well as lowering critical switching current"--

ISBN: 9781119698975 (hbk.) :NT4995Subjects--Topical Terms:

580491
Spintronics.

LC Class. No.: TK7874.887

Dewey Class. No.: 621.3

Spintronics : = materials, devices and applications /
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020 $z 1119698944 (pdf)
020 $z 1119698952 (epub)
020 $z 1119698960 (ebk.)
020 $a 9781119698944 (pdf)
020 $z 9781119698951 (epub)
020 $z 9781119698968 (ebk.)
035 $a (OCoLC)1316703287
040 $a DLC $b eng $e aacr2 $c DLC $d OCLCF
042 $a pcc
050 0 0 $a TK7874.887
082 0 0 $a 621.3 $2 23/eng/20220511
245 0 0 $a Spintronics : $b materials, devices and applications / $c edited by Kaiyou Wang, Meiyin Yang and Jun Luo.
246 3 0 $a Materials, devices and applications
260 # $a Hoboken, NJ : $b John Wiley & Sons, $c c2022.
300 $a xv, 313 p. : $b ill. (some col.) ; $c 26 cm.
490 1 $a Wiley series in materials for electronic and optoelectronic applications
504 $a Includes bibliographical references and index.
520 # $a "A brief introduction of theoretical and experimental research activities of spintronics materials, devices and applications recently. Giant Magnetoresistance (GMR) sensors are promising candidates for biomedical and environmental application such as detecting virus, cancer cells or heavy metal atoms. This detecting method is simple and convenient for individuals to diagnose health issues. The chapter will explain why the GMR materials and devices are useful in these specific applications and also involve the post 2016 developments for GMR sensors. TMR has much larger value of magneto-resistance than GMR, which provides higher resolution for detecting magnetic field. Now it is used in magnetic read head, earth magnetic sensors or other magnetic field detection related applications. The very recent progress on TMR sensors and its industry prospect will be also introduced in this chapter. Spin transfer torque (STT) which transfers spin angular momentum to adjacent magnets to manipulate the spin direction, will be applied widely in the next generation non-volatile STT-MRAM. STT-MRAM has the potential to become a leading storage technology, thanks to its high performance, easy downscaling to below 10 nm nodes and low cost. Recent research of STT-MRAM is now focusing on improving the thermal stability, endurance and TMR value, as well as lowering critical switching current"-- $c Provided by publisher
650 # 0 $a Spintronics. $3 580491
700 1 # $a Luo, Jun $c (Professor of microelectronics) $3 1384071
700 1 # $a Yang, Meiyin. $3 1384070
700 1 # $a Wang, Kaiyou $c (Physicist) $3 1384069
830 0 $a Wiley series in materials for electronic and optoelectronic applications. $3 745193