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Electromigration in metals : = fundamentals to nano-interconnects /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Electromigration in metals :/ Paul S. Ho ... [et al.]
Reminder of title:	fundamentals to nano-interconnects /
remainder title:	Fundamentals to nano-interconnects
other author:	Ho, P. S.
Published:	Cambridge ;Cambridge University Pres, : 2022.,
Description:	xiii, 417 p. :ill. ; : 25 cm.;
Subject:	Electrodiffusion. -
ISBN:	9781107032385 (hbk.) :

Electromigration in metals : = fundamentals to nano-interconnects /
Electromigration in metals :fundamentals to nano-interconnects /Fundamentals to nano-interconnectsPaul S. Ho ... [et al.] - Cambridge ;Cambridge University Pres,2022. - xiii, 417 p. :ill. ;25 cm.

Includes bibliographical references and index.

Introduction to electromigration -- Fundamentals of electromigration -- Thermal stress characteristics and stress induced void formation in aluminium and copper interconnects -- Stress evolution and damage formation in confined metal lines under electric stressing -- Electromigration in Cu interconnect structures -- Scaling effects on microstructure and resistivity of Cu and Co nanointerconnects analysis of electromigration induced stress evolution and voiding in Cu damascene lines with microstructure -- Massive scale statistical studies for electromigration -- Assessment of electromigration damage in large on-chip power grids.

Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers.

ISBN: 9781107032385 (hbk.) :NT2791Subjects--Topical Terms:

527935
Electrodiffusion.

LC Class. No.: TK7874.53 / .H62 2022

Dewey Class. No.: 621.3815

Electromigration in metals : = fundamentals to nano-interconnects /
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020 $a 9781107032385 (hbk.) : $c NT2791
020 $z 9781139505819 (ebk.)
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050 0 0 $a TK7874.53 $b .H62 2022
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245 0 0 $a Electromigration in metals : $b fundamentals to nano-interconnects / $c Paul S. Ho ... [et al.]
246 3 0 $a Fundamentals to nano-interconnects
260 # $a Cambridge ; $a New York, NY : $b Cambridge University Pres, $c 2022.
300 $a xiii, 417 p. : $b ill. ; $c 25 cm.
504 $a Includes bibliographical references and index.
505 0 # $a Introduction to electromigration -- Fundamentals of electromigration -- Thermal stress characteristics and stress induced void formation in aluminium and copper interconnects -- Stress evolution and damage formation in confined metal lines under electric stressing -- Electromigration in Cu interconnect structures -- Scaling effects on microstructure and resistivity of Cu and Co nanointerconnects analysis of electromigration induced stress evolution and voiding in Cu damascene lines with microstructure -- Massive scale statistical studies for electromigration -- Assessment of electromigration damage in large on-chip power grids.
520 # $a Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers.
650 # 0 $a Electrodiffusion. $3 527935
650 # 0 $a Metals $x Electric properties. $3 1071021
650 # 0 $a Interconnects (Integrated circuit technology) $x Materials. $3 1384083
700 1 # $a Ho, P. S. $3 1132008