國立虎尾科技大學 |

Language: English

Back

Nanoelectronics : = device physics, fabrication, simulation /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Nanoelectronics :/ Joachim Knoch.
Reminder of title:	device physics, fabrication, simulation /
Author:	Knoch, Joachim.
Published:	Berlin ;Walter de Gruyter GmbH, : c2021.,
Description:	xvi, 390 p. :ill. (chiefly col.) ; : 24 cm.;
Subject:	Nanoelectronics. -
ISBN:	9783110574210 (pbk.) :

Nanoelectronics : = device physics, fabrication, simulation /
Knoch, Joachim.

Nanoelectronics :device physics, fabrication, simulation /Joachim Knoch. - Berlin ;Walter de Gruyter GmbH,c2021. - xvi, 390 p. :ill. (chiefly col.) ;24 cm. - De Gruyter graduate. - De Gruyter graduate..

Includes bibliographical references (p. [377]-388) and index.

"The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well"--Publisher's website.

ISBN: 9783110574210 (pbk.) :NT2264

LCCN: 2020944404Subjects--Topical Terms:

574250
Nanoelectronics.

LC Class. No.: TK7874.84 / .K56 2021

Dewey Class. No.: 621.381

Nanoelectronics : = device physics, fabrication, simulation /
LDR:01321cam a2200265 a 4500 001 1080858
005 20221206083846.0
008 221220s2021 gw a b 001 0 eng d
010 $a 2020944404
020 $a 9783110574210 (pbk.) : $c NT2264
020 $a 3110574217 (pbk.)
020 $a 9783110575507 (PDF)
020 $a 9783110575552 (EPUB)
035 $a (OCoLC)on1096285609
035 $a 21673772
040 $a YDX $b eng $c YDX $d OCLCQ $d YDXIT $d OCLCO $d OCLCF $d DLC $d NFU
041 0 # $a eng
042 $a lccopycat
050 0 0 $a TK7874.84 $b .K56 2021
082 0 4 $a 621.381 $2 23
100 1 $a Knoch, Joachim. $3 1386472
245 1 0 $a Nanoelectronics : $b device physics, fabrication, simulation / $c Joachim Knoch.
260 # $a Berlin ; $a Boston : $b Walter de Gruyter GmbH, $c c2021.
300 $a xvi, 390 p. : $b ill. (chiefly col.) ; $c 24 cm.
490 1 $a De Gruyter graduate
504 $a Includes bibliographical references (p. [377]-388) and index.
520 # $a "The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well"--Publisher's website.
650 # 0 $a Nanoelectronics. $3 574250
830 0 $a De Gruyter graduate. $3 1229946