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High-k materials in multi-gate FET devices /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	High-k materials in multi-gate FET devices // edited by Shubham Tayal, Parveen Singla, and J. Paulo Davim
other author:	Tayal, Shubham.
Published:	Boca Raton :CRC Press, : c2022.,
Description:	xii, 164 p. :ill., ports. ; : 24 cm.;
Subject:	Electrochemistry. -
ISBN:	9780367639686 :

High-k materials in multi-gate FET devices /
High-k materials in multi-gate FET devices /edited by Shubham Tayal, Parveen Singla, and J. Paulo Davim - Boca Raton :CRC Press,c2022. - xii, 164 p. :ill., ports. ;24 cm. - Science, technology, and management series.

Includes bibliographical references and index.

"This book focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. This work will be of high interest to researchers in materials science, electronics engineering, IT, and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues"--

ISBN: 9780367639686 :NT4514

LCCN: 2021029732Subjects--Topical Terms:

591514
Electrochemistry.

LC Class. No.: QD551 / .H54 2021

Dewey Class. No.: 537/.24

High-k materials in multi-gate FET devices /
LDR:01186cam a2200241 a 4500 001 1080921
005 20221207112736.0
008 221220s2022 fluac b 001 0 eng
010 $a 2021029732
020 $a 9780367639686 : $c NT4514
020 $a 9780367639693 (pbk.)
020 $a 9781003121589 (ebk.)
035 $a 22083738
040 $a DLC $b eng $c DLC $d NFU
041 0 # $a eng
042 $a pcc
050 0 0 $a QD551 $b .H54 2021
082 0 0 $a 537/.24 $2 23
245 0 0 $a High-k materials in multi-gate FET devices / $c edited by Shubham Tayal, Parveen Singla, and J. Paulo Davim
260 # $a Boca Raton : $b CRC Press, $c c2022.
300 $a xii, 164 p. : $b ill., ports. ; $c 24 cm.
490 0 $a Science, technology, and management series
504 $a Includes bibliographical references and index.
520 # $a "This book focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. This work will be of high interest to researchers in materials science, electronics engineering, IT, and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues"-- $c Provided by publisher.
650 # 0 $a Electrochemistry. $3 591514
700 1 # $a Tayal, Shubham. $3 1386576
700 1 # $a Singla, Parveen. $3 1386577
700 1 # $a Davim, J. Paulo. $3 681719

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E048405

圖書館3F 書庫

一般圖書(BOOK)

一般圖書

537.24 H638 2022

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1 records • Pages 1 •
1

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