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MOS interface physics, process and characterization /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	MOS interface physics, process and characterization // Shengkai Wang and Xiaolei Wang.
Author:	Wang, Shengkai,
other author:	Wang, Xiaolei,
Published:	Boca Raton :CRC Press, : c2022.,
Description:	xi, 161 p. :ill. ; : 24 cm.;
Subject:	Metal oxide semiconductors - Design and construction -
ISBN:	9781032106274 :

MOS interface physics, process and characterization /
Wang, Shengkai,1984-

MOS interface physics, process and characterization /Shengkai Wang and Xiaolei Wang. - 1st ed. - Boca Raton :CRC Press,c2022. - xi, 161 p. :ill. ;24 cm.

Includes bibliographical references.

"The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices and integrated circuits is high quality MOS structure. This book contains abundant experimental examples focusing on MOS structure. The volume will be an essential reference for academics and postgraduates within the field of microelectronics"--

ISBN: 9781032106274 :NT2820

LCCN: 2021017023Subjects--Topical Terms:

1386591
Metal oxide semiconductors
--Design and construction

LC Class. No.: TK7871.99.M44 / W358 2022

Dewey Class. No.: 621.38152

MOS interface physics, process and characterization /
LDR:01163cam a2200241 a 4500 001 1080930
005 20221207130255.0
008 221220s2022 flua b 000 0 eng
010 $a 2021017023
020 $a 9781032106274 : $c NT2820
020 $a 9781032106281 (pbk.)
020 $a 9781003216285 (ebk.)
035 $a 21992953
040 $a DLC $b eng $c DLC $d DLC $d NFU
041 0 # $a eng
042 $a pcc
050 0 0 $a TK7871.99.M44 $b W358 2022
082 0 0 $a 621.38152
100 1 $a Wang, Shengkai, $d 1984- $3 1386589
245 1 0 $a MOS interface physics, process and characterization / $c Shengkai Wang and Xiaolei Wang.
250 $a 1st ed.
260 # $a Boca Raton : $b CRC Press, $c c2022.
300 $a xi, 161 p. : $b ill. ; $c 24 cm.
504 $a Includes bibliographical references.
520 # $a "The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit and the key to achieving high performance devices and integrated circuits is high quality MOS structure. This book contains abundant experimental examples focusing on MOS structure. The volume will be an essential reference for academics and postgraduates within the field of microelectronics"-- $c Provided by publisher.
650 # 0 $a Metal oxide semiconductors $x Design and construction $x Mathematics. $3 1386591
650 # 0 $a Semiconductors $x Junctions. $3 598324
650 # 0 $a Integrated circuits $x Research. $3 1386592
650 # 0 $a Solid state physics $x Experiments. $3 1386593
700 1 # $a Wang, Xiaolei, $d 1985- $3 1386590