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Atomic and Electronic Properties of 2D Moiré Interfaces
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
Atomic and Electronic Properties of 2D Moiré Interfaces/ by Astrid Weston.
作者:
Weston, Astrid.
面頁冊數:
XIV, 140 p. 91 illus., 86 illus. in color.online resource. :
Contained By:
Springer Nature eBook
標題:
Surfaces, Interfaces and Thin Film. -
電子資源:
https://doi.org/10.1007/978-3-031-12093-0
ISBN:
9783031120930
Atomic and Electronic Properties of 2D Moiré Interfaces
Weston, Astrid.
Atomic and Electronic Properties of 2D Moiré Interfaces
[electronic resource] /by Astrid Weston. - 1st ed. 2022. - XIV, 140 p. 91 illus., 86 illus. in color.online resource. - Springer Theses, Recognizing Outstanding Ph.D. Research,2190-5061. - Springer Theses, Recognizing Outstanding Ph.D. Research,.
Outline -- Introduction to 2-Dimensional Materials and Moiré Superlattices -- Fabrication Techniques -- Characterisation Techniques -- Atomic Structure of Reconstructed Lattices of Twisted Bilayer TMDs -- Electrical Properties of Reconstructed Lattices of Twisted Bilayer TMDs -- Final Conclusions and Future Outlooks.
This thesis provides the first atomic length-scale observation of the structural transformation (referred to as lattice reconstruction) that occurs in moiré superlattices of twisted bilayer transition metal dichalcogenides (TMDs) at low (θ < 2˚) twist angles. Studies using Scanning transmission electron microscopy (STEM) were limited due to the complexity of the (atomically-thin) sample fabrication requirements. This work developed a unique way to selectively cut and re-stack monolayers of TMDs with a controlled rotational twist angle which could then be easily suspended on a TEM grid to meet the needs of the atomically thin sample requirements. The fabrication technique enabled the study of the two common stacking-polytypes including 3R and 2H (using MoS2 and WS2 as the example) as well as their structural evolution with decreasing twist-angle. Also reported is a comprehensive investigation of electronic properties using scanning probe microscopy and electrical transport measurements of the artificially-engineered structures. These and other studies highlight the unique intrinsic properties of TMDs and their potential application in the development of the next generation of optoelectronics.
ISBN: 9783031120930
Standard No.: 10.1007/978-3-031-12093-0doiSubjects--Topical Terms:
1387727
Surfaces, Interfaces and Thin Film.
LC Class. No.: TA418.7-418.76
Dewey Class. No.: 620.44
Atomic and Electronic Properties of 2D Moiré Interfaces
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