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Microwave High Power High Efficiency GaN Amplifiers for Communication

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Microwave High Power High Efficiency GaN Amplifiers for Communication/ by Subhash Chandra Bera.
作者:	Bera, Subhash Chandra.
面頁冊數:	XVI, 260 p. 182 illus., 126 illus. in color.online resource. :
Contained By:	Springer Nature eBook
標題:	Communications Engineering, Networks. -
電子資源:	https://doi.org/10.1007/978-981-19-6266-0
ISBN:	9789811962660

Microwave High Power High Efficiency GaN Amplifiers for Communication
Bera, Subhash Chandra.

Microwave High Power High Efficiency GaN Amplifiers for Communication[electronic resource] /by Subhash Chandra Bera. - 1st ed. 2022. - XVI, 260 p. 182 illus., 126 illus. in color.online resource. - Lecture Notes in Electrical Engineering,9551876-1119 ;. - Lecture Notes in Electrical Engineering,317.

Chapter 1. Introduction -- Chapter 2. Semiconductor for Microwave High Power Amplifiers -- Chapter 3. Microwave Transistors -- Chapter 4. Microwave High Power Amplifiers -- Chapter 5. Class-A High Power Amplifiers -- Chapter 6. Class-B High Power Amplifiers -- Chapter 7. Class-F High Power Amplifiers -- Chapter 8. Class-J High Power Amplifiers -- Chapter 9. Thermal Design of GaN High Power Amplifiers.

The textbook discusses design and analysis of microwave high power and high efficiency amplifiers for communications, appropriate for undergraduate, post-graduate students, practical circuit designers and researchers in the field of electronics and communication engineering. This book covers basics of III-V group semiconductor materials and GaAs and GaN based High Electron Mobility Transistors (HEMTs) most suitable for microwave and mm wave power amplifiers required for present wireless communication systems and upcoming 4G and 5G mobile base stations. The book describes design and analysis of classical class of amplifier operations such as Class-A, B, AB, C and F. The coverage extends to advanced classes of amplifier operation such as extended continuous Class-B/Class-J, and extended continuous Class-F operations for broadband, high power and high efficiency performance. Analytical expressions are derived for circuit elements and performance parameters for clear understanding and required for practical design of power amplifiers. Each topic is supplemented with suitable schematic diagrams, analytical expressions and plotted results for clear understanding.

ISBN: 9789811962660

Standard No.: 10.1007/978-981-19-6266-0doiSubjects--Topical Terms:

669809
Communications Engineering, Networks.

LC Class. No.: TK7867-7867.5

Dewey Class. No.: 621.3815

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520 $a The textbook discusses design and analysis of microwave high power and high efficiency amplifiers for communications, appropriate for undergraduate, post-graduate students, practical circuit designers and researchers in the field of electronics and communication engineering. This book covers basics of III-V group semiconductor materials and GaAs and GaN based High Electron Mobility Transistors (HEMTs) most suitable for microwave and mm wave power amplifiers required for present wireless communication systems and upcoming 4G and 5G mobile base stations. The book describes design and analysis of classical class of amplifier operations such as Class-A, B, AB, C and F. The coverage extends to advanced classes of amplifier operation such as extended continuous Class-B/Class-J, and extended continuous Class-F operations for broadband, high power and high efficiency performance. Analytical expressions are derived for circuit elements and performance parameters for clear understanding and required for practical design of power amplifiers. Each topic is supplemented with suitable schematic diagrams, analytical expressions and plotted results for clear understanding.
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