Language:
English
繁體中文
Help
Login
Back
Switch To:
Labeled
|
MARC Mode
|
ISBD
Integrated Electronics on Aluminum Nitride = Materials and Devices /
Record Type:
Language materials, printed : Monograph/item
Title/Author:
Integrated Electronics on Aluminum Nitride/ by Reet Chaudhuri.
Reminder of title:
Materials and Devices /
Author:
Chaudhuri, Reet.
Description:
XVI, 255 p. 124 illus., 122 illus. in color.online resource. :
Contained By:
Springer Nature eBook
Subject:
Semiconductors. -
Online resource:
https://doi.org/10.1007/978-3-031-17199-4
ISBN:
9783031171994
Integrated Electronics on Aluminum Nitride = Materials and Devices /
Chaudhuri, Reet.
Integrated Electronics on Aluminum Nitride
Materials and Devices /[electronic resource] :by Reet Chaudhuri. - 1st ed. 2022. - XVI, 255 p. 124 illus., 122 illus. in color.online resource. - Springer Theses, Recognizing Outstanding Ph.D. Research,2190-5061. - Springer Theses, Recognizing Outstanding Ph.D. Research,.
Chapter 1. Introduction -- Chapter 2. Polarization-induced 2D Hole Gases in undoped (In)GaN/AlN Heterostructures -- Chapter 3. GHz-speed GaN/AlN p-channel Heterojunction Field Effect Transistors -- Chapter 4. Polarization-induced 2D Electron and Holes in undoped AlN/GaN/AlN Heterostructures -- Chapter 5. AlN/GaN/AlN High Electron Mobility Transistors -- Chapter 6. Integrated RF Electronics on the AlN Platform.
This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.
ISBN: 9783031171994
Standard No.: 10.1007/978-3-031-17199-4doiSubjects--Topical Terms:
578843
Semiconductors.
LC Class. No.: QC610.9-611.8
Dewey Class. No.: 537.622
Integrated Electronics on Aluminum Nitride = Materials and Devices /
LDR
:02851nam a22004095i 4500
001
1086225
003
DE-He213
005
20221206150541.0
007
cr nn 008mamaa
008
221228s2022 sz | s |||| 0|eng d
020
$a
9783031171994
$9
978-3-031-17199-4
024
7
$a
10.1007/978-3-031-17199-4
$2
doi
035
$a
978-3-031-17199-4
050
4
$a
QC610.9-611.8
072
7
$a
TJFD5
$2
bicssc
072
7
$a
TEC008090
$2
bisacsh
072
7
$a
TJFD
$2
thema
082
0 4
$a
537.622
$2
23
100
1
$a
Chaudhuri, Reet.
$e
author.
$4
aut
$4
http://id.loc.gov/vocabulary/relators/aut
$3
1392957
245
1 0
$a
Integrated Electronics on Aluminum Nitride
$h
[electronic resource] :
$b
Materials and Devices /
$c
by Reet Chaudhuri.
250
$a
1st ed. 2022.
264
1
$a
Cham :
$b
Springer International Publishing :
$b
Imprint: Springer,
$c
2022.
300
$a
XVI, 255 p. 124 illus., 122 illus. in color.
$b
online resource.
336
$a
text
$b
txt
$2
rdacontent
337
$a
computer
$b
c
$2
rdamedia
338
$a
online resource
$b
cr
$2
rdacarrier
347
$a
text file
$b
PDF
$2
rda
490
1
$a
Springer Theses, Recognizing Outstanding Ph.D. Research,
$x
2190-5061
505
0
$a
Chapter 1. Introduction -- Chapter 2. Polarization-induced 2D Hole Gases in undoped (In)GaN/AlN Heterostructures -- Chapter 3. GHz-speed GaN/AlN p-channel Heterojunction Field Effect Transistors -- Chapter 4. Polarization-induced 2D Electron and Holes in undoped AlN/GaN/AlN Heterostructures -- Chapter 5. AlN/GaN/AlN High Electron Mobility Transistors -- Chapter 6. Integrated RF Electronics on the AlN Platform.
520
$a
This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.
650
0
$a
Semiconductors.
$3
578843
650
0
$a
Solid state physics.
$3
641431
650
0
$a
Telecommunication.
$3
568341
650
0
$a
Electronics.
$3
596389
650
2 4
$a
Electronic Devices.
$3
1366460
650
2 4
$a
Microwaves, RF Engineering and Optical Communications.
$3
1365893
650
2 4
$a
Electronics and Microelectronics, Instrumentation.
$3
670219
710
2
$a
SpringerLink (Online service)
$3
593884
773
0
$t
Springer Nature eBook
776
0 8
$i
Printed edition:
$z
9783031171987
776
0 8
$i
Printed edition:
$z
9783031172007
776
0 8
$i
Printed edition:
$z
9783031172014
830
0
$a
Springer Theses, Recognizing Outstanding Ph.D. Research,
$x
2190-5053
$3
1253569
856
4 0
$u
https://doi.org/10.1007/978-3-031-17199-4
912
$a
ZDB-2-PHA
912
$a
ZDB-2-SXP
950
$a
Physics and Astronomy (SpringerNature-11651)
950
$a
Physics and Astronomy (R0) (SpringerNature-43715)
based on 0 review(s)
Multimedia
Reviews
Add a review
and share your thoughts with other readers
Export
pickup library
Processing
...
Change password
Login