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Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations/ edited by Jennifer Rupp, Daniele Ielmini, Ilia Valov.
其他作者:	Valov, Ilia.
面頁冊數:	VI, 383 p. 186 illus.online resource. :
Contained By:	Springer Nature eBook
標題:	Materials Engineering. -
電子資源:	https://doi.org/10.1007/978-3-030-42424-4
ISBN:	9783030424244

Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations
Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations[electronic resource] /edited by Jennifer Rupp, Daniele Ielmini, Ilia Valov. - 1st ed. 2022. - VI, 383 p. 186 illus.online resource. - Electronic Materials: Science & Technology. - Electronic Materials: Science & Technology.

Preface -- Memristive computing devices and applications -- Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication -- Modeling resistive switching materials and devices across scales -- Review of mechanisms proposed for redox based resistive switching structures -- Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices -- Nanoscale characterization of resistive switching using advanced conductive atomic force microscopy based setups -- SiO2 based conductive bridging random access memory -- Reset switching statistics of TaOx-based Memristor -- Effect of O2- migration in Pt/HfO2/Ti/Pt structure -- Operating mechanism and resistive switching characteristics of two- and three-terminal atomic switches using a thin metal oxide layer -- Interface-type resistive switching in perovskite materials -- Volume Resistive Switching in metallic perovskite oxides driven by the Metal-Insulator Transition -- Resistive states in strontium titanate thin films: Bias effects and mechanisms at high and low temperature -- Single crystalline SrTiO3 as memristive model system: From materials science to neurological and psychological functions -- Resistive switching memory using biomaterials -- Optical memristive switches.

This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers’ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept: -Explains diffusive processes at room temperature and materials/materials combination in resistive switching; -Illustrates the role of defects in zero, one, and two dimensions; -Features applications of ReRAMs in engineering such as novel computing architectures.

ISBN: 9783030424244

Standard No.: 10.1007/978-3-030-42424-4doiSubjects--Topical Terms:

1062318
Materials Engineering.

LC Class. No.: QC374-379

Dewey Class. No.: 620.11295

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